Panasonic MA2Z785 Datasheet
Schottky Barrier Diodes (SBD)
MA2Z785
Silicon epitaxial planar type
For super-high speed switching circuit
For small current rectification
Unit : mm
KA
■ Features
•
S-mini type 2-pin package, allowing high-density mounting
•
Allowing to rectify under (I
•
Optimum for high-frequency rectification because of its short
reverse recovery time (t
•
Low V
(forward rise voltage), with high rectification efficiency
•
F
Reverse voltage V
rr
(DC value) = 50 V guaranteed
R
= 100 mA) condition
F(AV)
)
■ Absolute Maximum Ratings Ta = 25°C
+ 0.1
0.1
±
0.5
− 0.06
0.16
0.4 ± 0.1
2
1.7 ± 0.1
2.5 ± 0.2
1
0.4 ± 0.1
0.625
0.3
0.1
±
1.25
0.1
±
0.7
Parameter Symbol Rating Unit
Reverse voltage (DC) V
Repetitive peak reverse voltage
V
Peak forward current I
Average forward current I
Non-repetitive peak forward I
surge current
*
Junction temperature T
Storage temperature T
R
RRM
FM
F(AV)
FSM
j
stg
50 V
50 V
300 mA
100 mA
1A
125 °C
−55 to +125 °C
1 : Anode
2 : Cathode
S-Mini Type Package (2-pin)
Marking Symbol: 2E
Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive)
■ Electrical Characteristics Ta = 25°C
Parameter Symbol Conditions Min Typ Max Unit
Reverse current (DC) I
R
Forward voltage (DC) V
Terminal capacitance C
Reverse recovery time
*
t
rr
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment.
2. Rated input/output frequency: 200 MHz
3. * : trr measuring circuit
VR = 50 V 30 µA
IF = 100 mA 0.55 V
F
VR = 0 V, f = 1 MHz 25 pF
t
IF = IR = 100 mA 3 ns
Irr = 10 mA, RL = 100 Ω
Bias Application Unit N-50BU
Pulse Generator
(PG-10N)
= 50 Ω
R
s
A
W.F.Analyzer
(SAS-8130)
= 50 Ω
R
i
Input Pulse Output Pulse
t
t
p
r
10%
90%
V
R
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
t
I
F
= 100 mA
I
F
= 100 mA
I
R
= 100 Ω
R
L
t
rr
I
= 10 mA
rr
t
1
MA2Z785
Schottky Barrier Diodes (SBD)
IF V
3
10
2
10
)
mA
Ta = 125°C
(
F
10
1
Forward current I
−1
10
−2
10
0 0.1 0.2 0.3 0.4 0.5 0.6
F
− 20°C
Forward voltage VF (V
IR T
4
10
3
10
)
µA
(
R
2
10
10
Reverse current I
1
a
VR = 50 V
75°C
25°C
30 V
5 V
VF T
Ct V
a
IF = 100 mA
10 mA
3 mA
)
R
0.8
0.7
)
0.6
V
(
F
0.5
0.4
0.3
0.2
Forward voltage V
0.1
0
)
−40 0 40 80 120 160 200
Ambient temperature Ta (°C
60
50
)
pF
(
t
40
30
20
Terminal capacitance C
10
4
10
3
10
)
µA
(
R
2
10
10
Reverse current I
1
−1
10
0 102030405060
IR V
R
Ta = 125°C
Reverse voltage VR (V
75°C
25°C
)
−1
10
−40 0 40 80 120 160 200
Ambient temperature Ta (°C
2
0
)
0 102030405060
Reverse voltage VR (V
)
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