Panasonic MA2Z748 User Manual
Schottky Barrier Diodes (SBD)
This product complies with the RoHS Directive (EU 2002/95/EC).
MA2Z748
Silicon epitaxial planar type
For super high speed switching
For small current rectification
■ Features
•
Low V
type of MA3X720
•
•
F
Low forward voltage V
and good rectification efficiency
F
Optimum for high frequency rectification because of its short
reverse recovery time t
rr
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage V
Repetitive peak reverse voltage V
Forward current (Average) I
Non-repetitive peak forward I
surge current
*
Junction temperature T
Storage temperature T
R
RRM
F(AV)
FSM
j
stg
Note)*: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
20 V
20 V
300 mA
3A
125 °C
−55 to +125 °C
1.25
±0.1
0.35
±0.1
1
0 to 0.1
2
0.5
5˚
1: Anode
2: Cathode
EIAJ: SC-76 SMini2-F1 Package
±0.1
0 to 0.1
5˚
0.16
0.7
+0.1
–0.06
±0.1
Unit: mm
Marking Symbol: 2K
±0.1
1.7
±0.1
0.4
(0.15)
±0.2
2.5
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
Reverse current I
F
R
Terminal capacitance C
Reverse recovery time
*
t
rr
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 400 MHz.
measurement circuit
4.*: t
rr
Bias Application Unit (N-50BU)
A
Pulse Generator
(PG-10N)
= 50 Ω
R
s
Publication date: April 2004 SKH00036BED
Wave Form Analyzer
(SAS-8130)
R
= 50 Ω
i
IF = 300 mA 0.4 V
VR = 10 V 30 µA
VR = 0 V, f = 1 MHz 60 pF
t
IF = IR = 100 mA 5 ns
Irr = 0.1 IR, RL = 100 Ω
Input Pulse Output Pulse
t
t
p
r
10%
90%
V
R
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
t
I
F
I
I
R
t
I
= 100 mA
F
= 100 mA
R
= 100 Ω
L
rr
= 0.1 I
rr
t
R
1
MA2Z748
This product complies with the RoHS Directive (EU 2002/95/EC).
IF V
3
10
Ta = 125°C
2
10
)
mA
(
F
10
1
Forward current I
−1
10
−2
10
0 0.2 0.4 0.6
F
−20°C
Forward voltage VF (V
IR T
4
10
3
10
)
µA
(
R
2
10
10
a
VR = 20 V
75°C
25°C
10 V
6 V
IR V
Ct V
R
Ta = 125°C
75°C
25°C
R
0.8
)
0.6
V
(
F
0.4
Forward voltage V
0.2
0
−40 0 40 80 120 160 200
)
3
10
)
A
(
2
10
F(surge)
10
4
10
3
10
)
µA
(
R
2
10
10
Reverse current I
1
−1
10
)
0 5 10 15 20 25 30
Reverse voltage VR (V
200
)
pF
150
(
t
100
VF T
a
I
=
500 mA
F
50 mA
5 mA
Ambient temperature Ta (°C
I
t
F(surge)
W
Ta = 25°C
I
t
W
)
F(surge)
Reverse current I
1
−1
10
−40 0 40 80 120 160 200
Ambient temperature Ta (°C
50
Terminal capacitance C
1
Forward surge current I
0
5101520
)
0
Reverse voltage VR (V
)
-1
10
-1
10
Pulse width tW (ms
101
2
10
)
2
SKH00036BED
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