Panasonic MA2Z748 Datasheet
Schottky Barrier Diodes (SBD)
MA2Z748
Silicon epitaxial planar type
For super-high speed switching circuit
For small current rectification
Unit : mm
KA
■ Features
•
Low V
type of MA2Z720
•
•
F
High rectification efficiency caused by its low forward-risevoltage (V
)
F
Optimum for high-frequency rectification because of its short
reverse recovery time (t
)
rr
■ Absolute Maximum Ratings Ta = 25°C
+ 0.1
0.1
±
0.5
− 0.06
0.16
0.4 ± 0.1
2
1.7 ± 0.1
2.5 ± 0.2
1
0.4 ± 0.1
0.625
0.1
±
0.3
1.25
0.1
±
0.7
Parameter Symbol Rating Unit
Reverse voltage (DC) V
Repetitive peak reverse voltage
Average forward current I
Non-repetitive peak forward I
surge current
*
Junction temperature T
Storage temperature T
V
F(AV)
R
RRM
FSM
j
stg
Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave
(non-repetitive)
20 V
20 V
300 mA
3A
125 °C
−55 to +125 °C
1 : Anode
2 : Cathode
S-Mini Type Package (2-pin)
Marking Symbol: 2K
Internal Connection
21
■ Electrical Characteristics Ta = 25°C
Parameter Symbol Conditions Min Typ Max Unit
Reverse current (DC) I
R
Forward voltage (DC) V
Terminal capacitance C
Reverse recovery time
*
t
rr
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment.
2. Rated input/output frequency: 400 MHz
3. * : trr measuring instrument
VR = 10 V 30 µA
IF = 300 mA 0.4 V
F
VR = 0 V, f = 1 MHz 60 pF
t
IF = IR = 100 mA 5 ns
Irr = 0.1 · IR, RL = 100 Ω
Bias Application Unit N-50BU
Pulse Generator
(PG-10N)
= 50 Ω
R
s
A
W.F.Analyzer
(SAS-8130)
= 50 Ω
R
i
Input Pulse Output Pulse
t
t
p
r
10%
90%
V
R
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
t
I
F
= 100 mA
I
F
= 100 mA
I
R
= 100 Ω
R
L
t
rr
I
= 0.1 · I
rr
t
R
1
MA2Z748
Schottky Barrier Diodes (SBD)
IF V
− 20°C
F
75°C
25°C
3
10
Ta = 125°C
2
10
)
mA
(
F
10
1
Forward current I
−1
10
−2
10
0 0.1 0.2 0.3 0.4 0.5 0.6
Forward voltage VF (V
T
4
10
3
10
)
µA
(
R
2
10
10
Reverse current I
1
−1
10
−40 0 40 80 120 160 200
a
VR = 20 V
10 V
6 V
Ambient temperature Ta (°C
IR V
4
10
3
10
)
µA
(
R
2
10
10
Reverse current I
1
−1
10
)
)
0 5 10 15 20 25 30
Reverse voltage VR (V
200
)
pF
150
(
t
100
50
Terminal capacitance C
0
5101520
0
Reverse voltage VR (V
Ta = 125°C
Ct V
R
75°C
25°C
0.8
0.7
)
0.6
V
(
F
0.5
0.4
0.3
0.2
Forward voltage V
0.1
0
−40 0 40 80 120 160 200
)
R IR
1 000
300
)
A
(
100
F(surge)
30
10
3
1
Forward surge current I
0.3
0.1
0.1
)
VF T
a
IF = 500 mA
50 mA
5 mA
Ambient temperature Ta (°C
I
t
F(surge)
0.3 3 30 100101
Pulse width tW (ms
W
Ta = 25°C
I
t
W
)
F(surge)
)
2
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