This product complies with the RoHS Directive (EU 2002/95/EC).
Schottky Barrier Diodes (SBD)
MA2Z7200G
Silicon epitaxial planar type
For high frequency rectification
■ Features
•
Forward current (Average) I
possible
•
High-density mounting is possible
= 500 mA rectification is
F(AV)
■ Package
•
Code
SMini2-F3
•
Pin Name
1: Anode
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage V
Maximum peak reverse voltage
Forward current (Average) I
Non-repetitive peak forward I
surge current
*
Junction temperature T
Storage temperature T
V
RM
F(AV)
FSM
stg
R
j
Note)*: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
40 V
40 V
500 mA
2A
125 °C
−55 to +125 °C
2: Cathode
■ Marking Symbol: 2L
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
Reverse current I
Terminal capacitance
Reverse recovery time
*
F
R
C
t
rr
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 400 MHz.
4.*: trr measurement circuit
Bias Application Unit (N-50BU)
A
Pulse Generator
(PG-10N)
= 50 Ω
R
s
Wave Form Analyzer
(SAS-8130)
= 50 Ω
R
i
IF = 500 mA 0.55 V
VR = 35 V 100 µA
VR = 0 V, f = 1 MHz 60 pF
t
IF = IR = 100 mA 5 ns
Irr = 0.1
, RL = 100 Ω
I
R
t
r
V
R
Input Pulse Output Pulse
t
p
10%
90%
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
t
I
F
I
I
R
t
I
= 100 mA
F
= 100 mA
R
= 100 Ω
L
rr
= 0.1 I
rr
t
R
Publication date: October 2007 SKH00185AED
1
MA2Z7200G
This product complies with the RoHS Directive (EU 2002/95/EC).
IF V
10
1
)
Ta = 125°C
A
(
−1
10
F
−2
10
−3
10
F
75°C 25°C
−20°C
Forward current I
−4
10
−5
10
0 0.2 0.4 0.6
Forward voltage VF (V
P
V
)
1
W
(
1
R(AV)
200
000
800
600
400
R(AV)
IR V
Ta = 125°C
I
180°
R
75°C
F(AV)
25°C
DC
100
)
80
pF
(
t
60
40
Terminal capacitance C
20
0
020406010 30 50
)
600
)
A
500
(m
F(AV)
400
300
200
−1
10
−2
10
)
A
(
R
−3
10
−4
10
Reverse current I
−5
10
−6
10
)
R
DC
0.9
0.8
0.5
0 102030405060
Reverse voltage VR (V
P
)
A
(m
F(AV)
300
250
200
150
100
F(AV)
I
F
θ
360°
120°
60°
Ct V
R
Reverse voltage VR (V
I
T
F(AV)
I
DC
0.5
0.2
0.1
F
T
V
= 125
j
R
Ta = 25°C
a
t
p
T
= 10 V
)
°C
200
Reverse power dissipation (Average) P
0
01020304050
Reverse voltage VR (V
)
50
0
Forward power dissipation (Average) P
0 300100 500 700
Forward current (Average) I
F(AV)
(mA)
100
Forward current (Average) I
0
0 40 16012080
Ambient temperature Ta
(°C)
2
SKH00185AED