Schottky Barrier Diodes (SBD)
MA2Z720
Silicon epitaxial planar type
For high-frequency rectification
Unit : mm
■ Features
•
Sealed in S-mini type 2-pin package
•
Allowing to rectify under (I
•
Allowing high-density mounting
= 500 mA) condition
F(AV)
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage (DC) V
Peak reverse voltage V
Average forward current I
F(AV)
Non-repetitive peak forward I
surge current
*
Junction temperature T
Storage temperature T
R
RM
FSM
j
stg
40 V
40 V
500 mA
125 °C
−55 to +150 °C
2A
0.1
±
0.5
2
+ 0.1
− 0.06
0.16
0.4 ± 0.1
1.7 ± 0.1
2.5 ± 0.2
S-Mini Type Package (2-pin)
Marking Symbol: 2L
0.625
1
0.4 ± 0.1
1 : Anode
2 : Cathode
0.3
0.1
±
1.25
Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave
(non-repetitive)
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Reverse current (DC) I
R
Forward voltage (DC) V
Terminal capacitance C
Reverse recovery time
*
t
rr
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and leakage of current from the equipment used.
2. Rated input/output frequency: 400 MHz
3. * : trr measuring instrument
VR = 35 V 100 µA
IF = 500 mA 0.55 V
F
VR = 0 V, f = 1 MHz 60 pF
t
IF = IR = 100 mA, Irr = 0.1 IR, RL = 100 Ω
5ns
0.1
±
0.7
Bias Application Unit N-50BU
Pulse Generator
(PG-10N)
= 50 Ω
R
s
A
W.F.Analyzer
(SAS-8130)
= 50 Ω
R
i
Input Pulse Output Pulse
t
t
p
r
10%
90%
V
R
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
t
I
F
= 100 mA
I
F
= 100 mA
I
R
= 100 Ω
R
L
t
rr
I
= 0.1 · I
rr
t
R
1
MA2Z720
Schottky Barrier Diodes (SBD)
IF V
10
1
)
Ta = 125°C
A
(
−1
10
F
−2
10
−3
10
F
75°C 25°C
− 20°C
Forward current I
−4
10
−5
10
0 0.1 0.2 0.3 0.4 0.5 0.6
Forward voltage VF (V
IR V
−1
10
−2
10
)
A
(
R
−3
10
−4
10
Reverse current I
−5
10
−6
10
)
0 102030405060
Reverse voltage VR (V
R
Ta = 125°C
75°C
25°C
100
)
80
pF
(
t
60
40
20
Terminal capacitance C
0
0 102030405060
)
Ct V
R
Ta = 25°C
Reverse voltage VR (V
)
2