Variable Capacitance Diodes
MA2Z392
N type GaAs epitaxial planar type
For VCO of a communications equipment
INDICATES
CATHODE
Unit : mm
0.4 ± 0.15
■ Features
•
Small series resistance r
•
Large capacitance ratio during low-voltage operation
and high Q value
D
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage (DC) V
Forward current (DC) I
Junction temperature T
Storage temperature T
R
F
j
stg
10 V
40 mA
125 °C
−55 to +125 °C
■ Electrical Characteristics Ta = 25°C
Parameter Symbol Conditions Min Typ Max Unit
Reverse current (DC) I
R
Forward voltage (DC) V
Reverse voltage (DC) V
Diode capacitance C
Series resistance
*
C
D(1V)
D(4V)
r
D
Note) 1.Rated input/output frequency: 470 MHz
2.*: rf measuring instrument: RF IMPEDANCE ANALYZER
VR = 6 V 50 nA
IF = 400 mA 0.8 V
F
IR = 1 µA10V
R
VR = 1 V, f = 1 MHz 3.5 5.0 6.5 pF
VR = 4 V, f = 1 MHz 1.0 1.8 2.6 pF
CD = 2.3 pF, f = 470 MHz 0.3 0.4 Ω
12
0.4 ± 0.15
0.9 ± 0.1
0 to 0.05
1.7 ± 0.1
2.5 ± 0.2
S-Mini Type Package (2-pin)
Marking Symbol: 7N
1.25 ± 0.1
− 0.05
+ 0.1
0.3
− 0.06
+ 0.1
0.16
1 : Anode
2 : Cathode
1
MA2Z392
Variable Capacitance Diodes
IF V
120
100
F
)
mA
(
80
F
60
40
Forward current I
20
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Forward voltage VF (V
Ta = 25°C
)
IR V
100
)
10
nA
(
R
1
0.1
Reverse current I
0.01
0246810
R
Ta = 25°C
Reverse voltage VR (V
12
CD V
10
)
pF
(
8
D
6
4
Diode capacitance C
2
0
0.1
)
1 10 100
Reverse voltage VR (V
R
f = 1 MHz
= 25°C
T
a
)
2