Variable Capacitance Diodes
MA2Z368
Silicon epitaxial planar type
For UHF and SHF electronic tuners
INDICATES
CATHODE
Unit : mm
0.4 ± 0.15
■ Features
•
Large capacitance ratio
•
Small series resistance r
•
S-mini type package, allowing downsizing of equipment and
D
0.4 ± 0.15
automatic insertion through the taping package and magazine
package
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage (DC) V
Peak reverse voltage V
Forward current (DC) I
Junction temperature T
Storage temperature T
R
RM
F
j
−55 to +150 °C
stg
32 V
34 V
20 mA
150 °C
0.9 ± 0.1
Marking Symbol: 6L
■ Electrical Characteristics Ta = 25°C
Parameter Symbol Conditions Min Typ Max Unit
Reverse current (DC) I
Diode capacitance C
Capacitance ratio
Series resistance
*
R
D(1V)
C
D(30V)
C
D(1V)/CD(30V)
r
D
Note) 1.Rated input/output frequency: 470 MHz
2.*: rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER
VR = 30 V 50 nA
VR = 1 V, f = 1 MHz 3.6 4.6 5.6 pF
VR = 30 V, f = 1 MHz 0.5 0.65 0.9 pF
VR = 4.5 pF, f = 470 MHz 2 Ω
12
+ 0.1
1.7 ± 0.1
2.5 ± 0.2
0 to 0.05
S-Mini Type Package (2-pin)
− 0.05
0.3
+ 0.1
− 0.06
0.16
1 : Anode
2 : Cathode
4
1.25 ± 0.1
1
MA2Z368
Variable Capacitance Diodes
10
CD V
5
)
pF
3
(
D
2
1
0.5
0.3
Diode capacitance C
0.2
0.1
0 8 16 24 324 1220283640
R
f = 1 MHz
T
a
Reverse voltage VR (V
IR T
100
)
10
nA
(
R
1
a
VR = 33 V
= 25°C
)
IF V
120
100
F
)
mA
(
80
F
60
40
Ta = 60°C
25°C
Forward current I
20
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Forward voltage VF (V
− 40°C
)
1.03
CD T
f = 1 MHz
1.02
1.01
)
)
a
T
(
1.00
= 25°C
D
a
C
T
(
D
C
0.99
0.98
0.97
0 20 40 60 80 100
Ambient temperature Ta (°C
a
VR = 1 V
30 V
)
0.1
Reverse current I
0.01
0 40 80 120 16020 60 100 140
Ambient temperature Ta (°C
)
2