Panasonic MA2Z331 Datasheet
Variable Capacitance Diodes
MA2Z331
Silicon epitaxial planar type
■ Features
•
Small series resistance r
•
Good linearity of C − V curve
•
Small type package, optimum for down-sizing of equipment
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage (DC) V
Forward current (DC) I
Junction temperature T
Storage temperature T
= 0.18 Ω (typ.)
D. rD
R
F
j
−55 to +150 °C
stg
12 V
20 mA
150 °C
INDICATES
CATHODE
12
0.4 ± 0.15
0.9 ± 0.1
0 to 0.05
1.7 ± 0.1
2.5 ± 0.2
S-Mini Type Package (2-pin)
Unit : mm
0.4 ± 0.15
− 0.05
+ 0.1
0.3
− 0.06
+ 0.1
0.16
1 : Anode
2 : Cathode
1.25 ± 0.1
Marking Symbol: 6T
■ Electrical Characteristics Ta = 25°C
Parameter Symbol Conditions Min Typ Max Unit
Reverse current (DC) I
Diode capacitance C
Capacitance ratio
Series resistance
*
R
D(1V)
C
D(2V)
C
D(4V)
C
D(10V)
C
D(1V)/CD(4V)
C
D(2V)/CD(10V)
r
D
Note) 1．Rated input/output frequency: 470 MHz
2．*: rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER
VR = 12 V 10 nA
VR = 1 V, f = 1 MHz 17.0 20.0 pF
VR = 2 V, f = 1 MHz 14.0 15.0 16.0 pF
VR = 4 V, f = 1 MHz 10.0 12.4 pF
VR = 10 V, f = 1 MHz 5.5 6.0 6.5 pF
CD = 9 pF, f = 470 MHz 0.18 0.22 Ω
1.53 1.6 1.83
2.25 2.5 2.75
1
MA2Z331
Variable Capacitance Diodes
100
CD V
50
)
pF
30
(
D
20
10
5
3
Diode capacitance C
2
1
0 8 16 24 324 1220283640
R
f = 1 MHz
T
Reverse voltage VR (V
IR T
a
VR = 10 V
)
nA
(
100
10
R
1
= 25°C
a
)
IF V
120
100
F
)
(
mA
F
80
60
40
Ta = 60°C
25°C
Forward current I
20
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Forward voltage VF (V
− 40°C
)
1.04
CD T
1.03
1.02
)
)
a
T
(
1.01
= 25°C
D
a
C
T
(
D
C
1.00
0.99
0.98
0 20 40 60 80 100
Reverse current Ta (°C
a
f = 1 MHz
VR = 1 V
2 V
4 V
10 V
)
0.1
Reverse current I
0.01
0 40 80 120 16020 60 100 140
Reverse current Ta (°C
)
2
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