Panasonic MA2Z081 Datasheet
Band Switching Diodes
MA2Z081
Silicon epitaxial planar type
For band switching
INDICATES
CATHODE
Unit : mm
0.4 ± 0.15
■ Features
•
S-mini type package, allowing downsizing of equipment and
automatic insertion through the taping package
•
Small diode capacitance C
•
Low forward dynamic resistance r
•
Optimum for a band switching of a tuner
D
f
0.4 ± 0.15
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage (DC) V
Forward current (DC) I
Operating ambient temperature*T
Storage temperature T
R
F
opr
stg
35 V
100 mA
−25 to +85 °C
−55 to +150 °C
Note) * : Maximum ambient temperature during operation
0.9 ± 0.1
Marking Symbol: 4D
■ Electrical Characteristics Ta = 25°C
Parameter Symbol Conditions Min Typ Max Unit
Reverse current (DC) I
R
Forward voltage (DC) V
Diode capacitance C
Forward dynamic resistance
*
r
f
Note) 1．Rated input/output frequency: 100 MHz
2．*: rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER
VR = 33 V 0.01 100 nA
IF = 100 mA 0.96 1.1 V
F
VR = 6 V, f = 1 MHz 0.9 1.2 pF
D
IF = 2 mA, f = 100 MHz 1.0 1.3 Ω
12
+ 0.1
1.7 ± 0.1
2.5 ± 0.2
0 to 0.05
S-Mini Type Package (2-pin)
− 0.05
0.3
+ 0.1
− 0.06
0.16
1 : Anode
2 : Cathode
1.25 ± 0.1
1
MA2Z081
Band Switching Diodes
IF V
2
10
)
10
mA
(
F
1
−1
10
Forward current I
Ta = 85°C 25°C −25°C
−2
10
0 0.2 0.4 0.6 0.8 1.0
F
Forward voltage VF (V
f
8
)
Ω
(
f
6
4
rf
)
IF = 2 mA
= 25°C
T
a
IR V
2
10
10
)
nA
(
R
1
−1
10
Reverse current I
−2
10
−3
10
0 1020304050
R
Ta = 85°C
25°C
Reverse voltage VR (V
rf f
6
)
5
Ω
(
f
4
3
IF = 3 mA
= 25°C
T
a
Tester: TDC-121A
r
f
IR T
2
10
10
)
nA
(
VR = 25 V 10 V
R
1
−1
10
Reverse current I
−2
10
−3
10
0 40 80 120 160
)
Ambient temperature Ta (°C
a
)
rf f
1.2
)
1.0
Ω
(
f
0.8
0.6
IF = 3 mA
= 25°C
T
a
Tester: TDC-121A
r
f
2
Forward dynamic resistance r
0
1
10 1003 30 300 1 000
Frequency f (MHz
I
4
)
Ω
(
f
3
2
1
Forward dynamic resistance r
0
0.1
1100.3 3 30 100
Forward current IF (mA
F
f = 100 MHz
= 25°C
T
a
2
1
Forward dynamic resistance r
0
1
)
10
5
)
pF
3
(
D
2
1
0.5
0.3
Diode capacitance C
0.2
0.1
0 8 16 24 324 1220283640
)
10 1003 30 300 1 000
Frequency f (MHz
C
V
D
R rf
f = 1 MHz
T
Reverse voltage VR (V
)
= 25°C
a
)
0.4
0.2
Forward dynamic resistance r
0
10
100
30 300
Frequency f (MHz
1 000
3 000 10 000
)
2
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