Panasonic MA2YD21 User Manual

Schottky Barrier Diodes (SBD)
This product complies with the RoHS Directive (EU 2002/95/EC).
MA2YD21
Silicon epitaxial planar type
For high frequency rectification
Features
Low forward voltage: V
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage V
Repetitive peak reverse voltage V
1
Forward current (Average)
Non-repetitive peak forward I
surge current
2
*
Junction temperature T
Storage temperature T
Note)*1: Mounted on an alumina PC board
2: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
*
*
= 1 A rectification is possible
F(AV)
< 0.4 V
F
R
RRM
I
F(AV)
FSM
j
stg
125 °C
55 to +125 °C
15 V
15 V
1.0 A
3A
Unit: mm
±0.05
0.45
0.80
±0.1
±0.1
2.6
0.16
0 to 0.3
±0.1
3.5
+0.1 –0.06
±0.1
1.6
1
2
0.55
1: Anode 2: Cathode Mini2-F1 Package
±0.1
0 to 0.1
Marking Symbol: 2X
0 to 0.1
Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
Reverse current I
F
R
Terminal capacitance C
Reverse recovery time
*
t
rr
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3.
: t
measurement circuit
*
rr
Bias Application Unit (N-50BU)
A
Pulse Generator (PG-10N)
= 50
R
s
Wave Form Analyzer (SAS-8130) Ri = 50 Ω
IF = 1 A 0.4 V
VR = 6 V 1.5 mA
VR = 0 V, f = 1 MHz 180 pF
t
IF = IR = 100 mA 12 ns Irr = 10 mA, RL = 100
I
F
I I R
Output Pulse
t
rr
I
rr
= 100 mA
F
= 100 mA
R
= 100
L
= 10 mA
Input Pulse
t
t
p
r
10%
90%
V
R
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
t
t
Publication date: April 2004 SKH00033BED
1
MA2YD21
This product complies with the RoHS Directive (EU 2002/95/EC).
IF V
75°C
25°C
20°C
F
4
10
Ta = 125°C
3
10
)
2
A
10
(m
F
10
1
1
10
Forward current I
2
10
3
10
0 0.2 0.4 0.6
Forward voltage VF (V
IR V
4
10
3
10
) A
2
10
(m
R
10
1
Reverse current I
1
10
2
10
)
01020
Reverse voltage VR (V
R
Ta = 125°C
75°C
25°C
300
) pF
(
t
200
100
Terminal capacitance C
0
01020
)
Ct V
R
T
Reverse voltage VR (V
= 25°C
a
)
2
SKH00033BED
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