Panasonic MA2YD17 User Manual

Schottky Barrier Diodes (SBD)

This product complies with the RoHS Directive (EU 2002/95/EC).

MA2YD17

Silicon epitaxial planar type

For high frequency rectification

■ Features

•

Reverse voltage V

= 100 V is guaranteed

R

1.6

±0.1

Unit: mm

±0.05

0.80

1

0 to 0.1

±0.1

±0.1

2.6

3.5

0 to 0.1

5˚

0.45

±0.1

0.16

0 to 0.3

+0.1
–0.06

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Reverse voltage V

Maximum peak reverse voltage

V

Forward current (Average) I

Non-repetitive peak forward I

surge current

*

Junction temperature T

Storage temperature T

R

RM

F(AV)

FSM

j

stg

100 V

100 V

300 mA

1.5 A

125 °C

−55 to +125 °C

2

0.55

5˚

1: Anode
2: Cathode Mini2-F1 Package

±0.1

Marking Symbol: 2T

Note)*: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit

Forward voltage V

Reverse current I

F

R

Terminal capacitance C

Reverse recovery time

*

t

rr

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.

2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body

and the leakage of current from the operating equipment.

3.*: trr measurement circuit

IF = 300 mA 0.50 0.58 V

VR = 100 V 200 µA

VR = 0 V, f = 1 MHz 100 pF

t

IF = IR = 100 mA 7 ns
Irr = 0.1 IR , RL = 100 Ω

Bias Application Unit (N-50BU)

A

Pulse Generator
(PG-10N)

= 50 Ω

R

s

Publication date: April 2004 SKH00032BED

Wave Form Analyzer
(SAS-8130)
R

= 50 Ω

i

Input Pulse Output Pulse

t

t

p

r

10%

90%

V

R

= 2 µs

t

p

= 0.35 ns

t

r

δ = 0.05

t

I

F

I

= 100 mA

F

= 100 mA

I

R

= 100 Ω

R

L

t

rr

I

= 0.1 I

rr

t

R

1

MA2YD17

This product complies with the RoHS Directive (EU 2002/95/EC).

IF  V

3

10

Ta = 125°C

2

10

)
A

(m

F

10

1

Forward current I

−1

10

−2

10

0 0.2 0.4 0.6

F

75°C

25°C

−20°C

Forward voltage VF (V

IR  V

5

10

4

10

)
A

(µ

R

3

10

2

10

Reverse current I

10

1

)

0 40 80 120

Reverse voltage VR (V

R

Ta = 125°C

75°C

25°C

)

80

pF

(

t

40

Terminal capacitance C

0

0 40 80 120

)

Ct  V

R

T

Reverse voltage VR (V

= 25°C

a

)

2

SKH00032BED