Panasonic MA2YD15 User Manual

Schottky Barrier Diodes (SBD)

This product complies with the RoHS Directive (EU 2002/95/EC).

MA2YD15

Silicon epitaxial planar type

For high frequency rectification

■ Features

•

Forward current (Average) I

•

Low forward voltage V

•

Small reverse current I

F

R

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Reverse voltage V

Repetitive peak reverse voltage V

1

Forward current (Average)

Non-repetitive peak forward I

surge current

2

*

Junction temperature T

Storage temperature T

Note)*1: Mounted on an alumina PC board

2: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)

*

*

= 1 A rectification is possible

F(AV)

20 V

25 V

1.0 A

3A

125 °C

−55 to +125 °C

I

F(AV)

R

RRM

FSM

j

stg

Unit: mm

±0.05

5˚

0.45

0.80

±0.1

±0.1

2.6

0.16

0 to 0.3

±0.1

3.5

+0.1
–0.06

±0.1

1.6

1

2

0.55

5˚

1: Anode
2: Cathode Mini2-F1 Package

±0.1

0 to 0.1

Marking Symbol: 2R

0 to 0.1

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit

Forward voltage V

Reverse current I

R

Terminal capacitance C

Reverse recovery time

*

t

rr

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.

2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body

and the leakage of current from the operating equipment.

3.*: trr measurement circuit

Bias Application Unit (N-50BU)

A

Pulse Generator
(PG-10N)

= 50 Ω

R

s

Wave Form Analyzer
(SAS-8130)
R

= 50 Ω

i

IF = 1.0 A 0.45 V

F

VR = 20 V 100 µA

VR = 0 V, f = 1 MHz 120 pF

t

IF = IR = 100 mA 10 ns
Irr = 0.1 IR, RL = 100 Ω

Input Pulse Output Pulse

t

t

p

r

10%

90%

V

R

= 2 µs

t

p

= 0.35 ns

t

r

δ = 0.05

t

I

F

I
I
R

t

I

= 100 mA

F

= 100 mA

R

= 100 Ω

L

rr

= 0.1 I

rr

t

R

Publication date: April 2004 SKH00031BED

1

MA2YD15

This product complies with the RoHS Directive (EU 2002/95/EC).

IF  V

4

10

3

10

)

2

A

10

(m

F

10

1

−1

10

Forward current I

−2

10

−3

10

Ta = 125°C

0 0.2 0.4 0.6

F

75°C

25°C

Forward voltage VF (V

IR  T

2

10

10

)
A

(m

R

1

−1

10

a

VR = 20 V

)

10 V

5 V

30 V

IR  V

2

10

10

)
A

(m

R

1

−1

10

Reverse current I

−2

10

−3

10

0102030

R

Ta = 125°C

75°C

25°C

Reverse voltage VR (V

VF  T

0.6

)

V

(

0.4

F

0.2

Forward voltage V

0

0 40 80 120

)

Ambient temperature Ta (°C

a

IF = 1 A

700 mA

100 mA

)

Reverse current I

−2

10

−3

10

0 40 80 120

Ambient temperature Ta (°C

)

2

SKH00031BED