Panasonic MA2X707 Datasheet

Schottky Barrier Diodes (SBD)

MA2X707

Silicon epitaxial planar type

For UHF mixer

■ Features

•

Small forward voltage V

•

Optimum for UHF mixer because of its large conversion gain
(GC)

•

Mini type package, allowing downsizing of equipment and
automatic insertion through the taping package

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Reverse voltage (DC) V

Forward voltage V

Junction temperature T

Storage temperature T

F

R

F

j

stg

5V

0.5 V

125 °C

−55 to +125 °C

INDICATES
CATHODE

12

+ 0.2

− 0.1

1.6

3.3 ± 0.2

*(3.8 ± 0.2)

5°

0.30 to 0.05

+ 0.2

− 0.1

1.1

5°

Marking Symbol: 5B

Unit : mm

+ 0.2

2.7

− 0.1

+ 0.1

− 0.03 0.55 ± 0.1

0.16

*( ): WL type

1 : Anode

Mini Type Package (2-pin)

2 : Cathode

■ Electrical Characteristics Ta = 25°C

Parameter Symbol Conditions Min Typ Max Unit

Forward current (DC) I

Reverse current (DC) I

F

R

Forward voltage (DC) V

Reverse break down voltage (DC) V

(BR)R

Terminal capacitance C

1,2

Conversion gain

*

GC

Static breakdown strength C = 100 pF, Breakdown judgment 100 200 V

Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a

human body and the leakage of current from the operating equipment

  2. Noise figure is 8.5 dB.

3. Rated input/output frequency: 935 MHz

4. *1: Judgement is to be made per each chip lot. Sampling of LTPD = 20% and n = 11 is guaranteed.

*2: Set min. GC = −7 dB. Out-spec products, if any, this specification would be reviewed

VF = 0.5 V 35 100 mA

VR = 5 V 35 µA

IF = 2 mA 0.25 V

F

IR = 1 mA 5 V

VR = 0.5 V, f = 1 MHz 0.65 0.85 1.05 pF

t

RF = 890 MHz, LO = 935 MHz, IF = 45 MHz

−7 −5dB

point IR ≥ 35 µA

1

MA2X707

Schottky Barrier Diodes (SBD)

IF  V

3

10

)

2

10

mA
(

F

10

1

Forward current I

−1

10

0 0.4 0.8 1.2 2.01.6 2.4

F

Forward voltage VF (V

VB  C

300

300

)
V

(

200

200

B

Ta = 25°C

)

IR  V

3

10

2

10

)
µA

(

R

10

1

Reverse current I

−1

10

−2

10

0 4 8 12 16

R

Reverse voltage VR (V

)
dB

(

0

GC  P

−4

−8

−12

LOC

Ta = 25°C

)

Ta = 25°C

Ct  V

10

5

)
pF

(

3

t

2

1

0.5

0.3

Terminal capacitance C

0.2

0.1
0 8 16 24 32 404 12202836

R

Reverse voltage VR (V

f = 1 MHz

= 25°C

T

a

)

100

100

Static breakdown V

0

0

10

10

2

2

10

10

Capacitor capacitance C (pF

−16

Conversion gain GC

−20

3

3

10

10

10

10

)

−24

4

4

−20 −10 0 10 20 30

Local input power P

LOC

(dBm

)

2