Variable Capacitance Diodes
MA2X341
Silicon epitaxial planar type
For AFC of UHF and VHF electronic tuner
■ Features
•
Large capacitance ratio
•
Small series resistance r
•
Mini type package, allowing downsizing of equipment and
automatic insertion through the taping package
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage (DC) V
Peak reverse voltage V
Junction temperature T
Storage temperature T
D
R
RM
j
stg
30 V
34 V
150 °C
−55 to +150 °C
INDICATES
CATHODE
12
+ 0.2
− 0.1
1.6
+ 0.2
− 0.1
2.7
3.3 ± 0.2
*(3.8 ± 0.2)
5°
0.30 to 0.05
+ 0.2
− 0.1
1.1
5°
*( ): WL type
Mini Type Package (2-pin)
Unit : mm
+ 0.1
− 0.03 0.55 ± 0.1
0.16
1 : Anode
2 : Cathode
Marking Symbol: 6K
■ Electrical Characteristics Ta = 25°C
Parameter Symbol Conditions Min Typ Max Unit
Reverse current (DC) I
Diode capacitance C
Capacitance ratio
Series resistance
*
R
D(2V)
C
D(10V)
C
D(2V)/CD(10V)
r
D
Note) 1.Rated input/output frequency: 470 MHz
2.*: rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER
VR = 30 V 10 nA
VR = 2 V, f = 1 MHz 10.5 16.0 pF
VR = 10 V, f = 1 MHz 3.3 5.7 pF
VR = 9 pF, f = 470 MHz 1.6 Ω
2.8 3.4
1
MA2X341
Variable Capacitance Diodes
100
CD V
50
)
pF
30
(
D
20
10
5
3
Diode capacitance C
2
1
0 8 16 24 324 1220283640
R
f = 1 MHz
T
a
Reverse voltage VR (V
IR T
a
VR = 30 V
)
nA
(
100
10
R
1
= 25°C
)
IF V
120
100
F
)
mA
(
80
F
60
40
Ta = 60°C
25°C
Forward current I
20
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Forward voltage VF (V
− 40°C
)
1.03
CD T
1.02
1.01
)
)
a
T
(
1.00
= 25°C
D
a
C
T
(
D
C
0.99
0.98
0.97
0 20 40 60 80 100
Ambient temperature Ta (°C
a
f = 1 MHz
VR = 2 V
10 V
)
0.1
Reverse current I
0.01
0 40 80 120 16020 60 100 140
Ambient temperature Ta (°C
CD rank classification
C
D(10V)
3.0
3.5
4.0
4.5
16
C
/ C
D(10V)
= 3.4
C
D(2V)
15
14
(pF)
13
D(2V)
C
12
11
10
D(2V)
(pF)
/ C
5.0
D(10V)
)
5.5
= 2.8
6.0
2