Variable Capacitance Diodes
MA2SV07
Silicon epitaxial planar type
For VCO
■ Features
•
Good linearity and large capacitance-ratio in C
•
High frequency type by this low capacitance
•
Small series resistance r
•
SS-mini type package, allowing downsizing of equipment and
D
automatic insertion through the taping package
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage (DC) V
Junction temperature T
Storage temperature T
R
j
stg
VR relation
D
6V
150 °C
−55 to +150 °C
Unit : mm
0.15 min.
− 0.02
+ 0.05
0.8 ± 0.10.7 ± 0.1
0.27
SS-Mini Type Package (2-pin)
1.3 ± 0.1
1.7 ± 0.1
0 to 0.1
0.15 min.
− 0.02
+ 0.05
0.27
− 0.02
+ 0.05
0.13
1 : Anode
2 : Cathode
Marking Symbol: 1A
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Reverse current (DC) I
Diode capacitance C
Capacitance ratio
Series resistance
*
R
D(1V)
C
D(3V)
C
D(1V)/CD(3V)
r
D
Note) 1.Rated input/output frequency: 470 MHz
2.*: rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER
VR = 5 V 10 nA
VR = 1 V, f = 1 MHz 2.88 3.12 pF
VR = 3 V, f = 1 MHz 1.49 1.62 pF
VR = 3 V, f = 470 MHz 0.35 Ω
1.84 2.02
1