Panasonic MA2SP060G User Manual
This product complies with the RoHS Directive (EU 2002/95/EC).
PIN Diodes
MA2SP060G
Silicon planar type
For high frequency switch
■ Features
• Low terminal capacitance: Ct ≤ 0.6 pF
• Low forward dynamic resistance: r
≤ 1.2 Ω
f
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage V
Forward current I
Junction temperature T
Storage temperature T
R
F
j
−55 to +150 °C
stg
100 mA
150 °C
60 V
■ Package
•
Code
SSMini2-F4
•
Pin Name
1: Anode
2: Cathode
■ Marking Symbol: 6P
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
Reverse current I
Terminal capacitance C
Forward dynamic resistance r
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
R
IF = 10 mA 0.85 1.0 V
F
VR = 60 V 1.0 100 nA
VR = 1 V, f = 1 MHz 0.45 0.6 pF
t
IF = 10 mA, f = 100 MHz 0.80 1.2 Ω
f
Publication date: October 2007 SKL00031AED
1
MA2SP060G
This product complies with the RoHS Directive (EU 2002/95/EC).
IF V
= 150°C
a
F
10
10
10
(mA)
F
3
2
T
1
−1
10
−20°C
Forward current I
−2
10
−3
10
0 0.2 0.4 0.6 0.8 1 1.2
Forward voltage VF (V)
rf I
3
10
(Ω)
2
f
10
10
F
100°C
25°C
Ta = 25°C
f = 100 MHz
IR V
T
a
R
= 150°C
4
10
3
10
105°C
2
10
(nA)
R
10
1
Reverse current I
−1
10
−2
10
0 102030 40506070
25°C
Reverse voltage VR (V)
Ct V
0.6
R
0.5
(pF)
t
0.4
0.3
0.2
Terminal capacitance C
0.1
0
0 5 10 15 20 25 30 35 40
Reverse voltage VR (V)
= 25°C
T
a
f = 1 MHz
1
Forward dynamic resistance r
−1
10
−2
10
−1
10
Forward current IF (mA)
110
2
SKL00031AED
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