Panasonic MA2SP050G User Manual
This product complies with the RoHS Directive (EU 2002/95/EC).
PIN diodes
MA2SP050G
Silicon epitaxial planar type
For high frequency attenuator
■ Features
• High performance forward current IF controlled forward dy-
namic resistance r
• Small terminal capacitance C
• Miniature package and surface mounting type
f
t
■ Package
•
Code
SSMini2-F4
•
Pin Name
1: Anode
2: Cathode
■ Absolute Maximum Ratings Ta = 25°C
■ Marking Symbol: 6P
Parameter Symbol Rating Unit
Reverse voltage V
Forward current I
Junction temperature T
Storage temperature T
R
F
j
stg
60 V
50 mA
150 °C
−55 to +150 °C
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
Reverse current I
Terminal capacitance C
Forward dynamic resistance r
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
F
R
f
IF = 10 mA 1.0 V
VR = 60 V 100 nA
VR = 0 V, f = 1 MHz 2.4 pF
t
IF = 10 mA, f = 100 MHz 5.5 Ω
Publication date: October 2007 SKL00030AED
1
MA2SP050G
This product complies with the RoHS Directive (EU 2002/95/EC).
IF V
rf I
F
F
3
10
2
10
)
mA
(
F
10
1
Forward current I
−1
10
−2
10
Ta = 150°C
100°C
0 0.2 0.4 0.6 0.8 1.0 1.2
Forward voltage VF (V
3
10
)
Ω
(
f
2
10
−20°C
25°C
)
f = 100 MHz
= 25°C
T
a
4
10
3
10
2
)
10
nA
(
10
R
1
−1
10
−2
Reverse current I
10
−3
10
−4
10
020 6040
Reverse voltage VR
IR V
Ta = 150°C
100°C
25°C
R
0.8
)
pF
0.6
(
t
0.4
0.2
Terminal capacitance C
0
0
(V)
Ct V
R
f = 1 MHz
T
20 40 60
Reverse voltage VR (V
= 25°C
a
)
10
Forward dynamic resistance r
1
−2
10
−1
10
Forward current IF (mA
110
)
2
SKL00030AED
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