Panasonic MA2SP05 User Manual
PIN diodes
This product complies with the RoHS Directive (EU 2002/95/EC).
MA2SP05
Silicon epitaxial planar type
For high frequency attenuator
■ Features
• High performance forward current IF controlled forward dy-
namic resistance r
• Small terminal capacitance C
• Miniature package and surface mounting type
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage V
Forward current I
Junction temperature T
Storage temperature T
f
t
R
F
j
stg
60 V
50 mA
150 °C
−55 to +150 °C
Unit: mm
+0.05
0.60
–0.03
+0.05
0.80
–0.03
1
2
0.30±0.05
0.01±0.01
(0.60)
(0.60)
0.01±0.01
5˚
0.80±0.05(0.80)
5˚
EIAJ: SC-79 SSMini2-F1 Package
+0.05
0.12
–0.02
+0.05
–0.03
1.60±0.05
1.20
+0
0
–0.05
(0.15)
1: Anode
2: Cathode
Marking Symbol: 6P
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
Reverse current I
F
R
Terminal capacitance C
Forward dynamic resistance r
f
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
IF = 10 mA 1.0 V
VR = 60 V 100 nA
VR = 0 V, f = 1 MHz 2.4 pF
t
IF = 10 mA, f = 100 MHz 5.5 Ω
Publication date: March 2004 SKL00012BED
1
MA2SP05
This product complies with the RoHS Directive (EU 2002/95/EC).
IF V
rf I
F
F
3
10
2
10
)
mA
(
F
10
1
Forward current I
−1
10
−2
10
Ta = 150°C
100°C
0 0.2 0.4 0.6 0.8 1.0 1.2
Forward voltage VF (V
3
10
)
Ω
(
f
2
10
−20°C
25°C
)
f = 100 MHz
= 25°C
T
a
4
10
3
10
2
)
10
nA
(
10
R
1
−1
10
−2
Reverse current I
10
−3
10
−4
10
020 6040
Reverse voltage VR
IR V
Ta = 150°C
100°C
25°C
R
0.8
)
pF
0.6
(
t
0.4
0.2
Terminal capacitance C
0
0
(V)
Ct V
R
f = 1 MHz
T
20 40 60
Reverse voltage VR (V
= 25°C
a
)
10
Forward dynamic resistance r
1
−2
10
−1
10
Forward current IF (mA
110
)
2
SKL00012BED
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