Panasonic MA2SP01 User Manual
PIN diodes
This product complies with the RoHS Directive (EU 2002/95/EC).
MA2SP01
Silicon epitaxial planar type
For high frequency switch
■ Features
• Small terminal capacitance C
• Small forward dynamic resistance r
• Miniature package and surface mounting type
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage V
Forward current I
Power dissipation P
Junction temperature T
Storage temperature T
t
f
R
F
D
j
stg
100 mA
150 mW
150 °C
−55 to +150 °C
60 V
Unit: mm
+0.05
0.60
+0.05
0.80
–0.03
1
2
0.30±0.05
(0.60)
0.01±0.01
(0.60)
0.01±0.01
0.80±0.05(0.80)
5˚
EIAJ: SC-79 SSMini2-F1 Package
–0.03
0.12
+0.05
1.20
5˚
+0
0
–0.05
1: Anode
2: Cathode
Marking Symbol: 2P
+0.05
–0.02
–0.03
(0.15)
1.60±0.05
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
Reverse current I
F
R
Terminal capacitance C
Forward dynamic resistance r
f
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
Publication date: March 2004 SKL00010BED
IF = 10 mA 1.0 V
VR = 60 V 100 nA
VR = 1 V, f = 1 MHz 0.8 pF
t
IF = 10 mA, f = 100 MHz 1.0 Ω
1
MA2SP01
This product complies with the RoHS Directive (EU 2002/95/EC).
IF V
rf I
F
F
3
10
2
10
)
mA
(
F
10
1
Forward current I
−1
10
−2
10
0 0.2 0.4 0.6 0.8 1.0 1.2
100°C
Ta = 150°C
Forward voltage VF (V
3
10
)
Ω
(
f
2
10
10
−20°C
25°C
)
f = 100 MHz
= 25°C
T
a
3
10
Ta = 150°C
2
10
)
10
nA
(
R
1
−1
10
−2
10
Reverse current I
−3
10
−4
10
25°C
020 6040
Reverse voltage VR
IR V
100°C
R
1.0
)
0.8
pF
(
t
0.6
0.4
Terminal capacitance C
0.2
0
0
(V)
Ct V
R
f = 1 MHz
T
20 40 60
Reverse voltage VR (V
= 25°C
a
)
1
Forward dynamic resistance r
−1
10
−2
10
−1
10
Forward current IF (mA
110
)
2
SKL00010BED
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