Panasonic MA2SE010G User Manual

This product complies with the RoHS Directive (EU 2002/95/EC).

Schottky Barrier Diodes (SBD)

MA2SE010G

Silicon epitaxial planar type

For mixer

■ Features

• High-frequency wave detection is possible

• Low forward voltage V

• Small terminal capacitance C

• SS-Mini type 2-pin package

F

t

■ Package

•

Code
SSMini2-F4

•

Pin Name

1: Anode
2: Cathode

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Reverse voltage V

Maximum peak reverse voltage V

Forward current I

Peak forward current I

Junction temperature T

Storage temperature T

R

RM

F

FM

j

−55 to +125 °C

stg

100 mA

125 °C

20 V

20 V

35 mA

■ Marking Symbol: 4L

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit

Forward voltage V

Reverse current I

Terminal capacitance C

Forward dynamic resistance r

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.

2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body

and the leakage of current from the operating equipment.

3. Rated input/output frequency: 2 GHz

F1

V

F2

R

f

IF = 1 mA 0.41 V

IF = 35 mA 1.0 V

VR = 15 V 200 nA

VR = 0 V, f = 1 MHz 1.2 pF

t

IF = 5 mA 40 Ω

Publication date: October 2007 SKH00184AED

1

MA2SE010G

This product complies with the RoHS Directive (EU 2002/95/EC).

IF  V

10

10

10

(mA)

F

−1

10

3

2

1

F

Forward current I

−2

10

−3

10

0 0.4 0.8 1.2

Forward voltage VF (V)

T

= 25°C

a

IR  V

3

10

2

10

10

(µA)

R

1

−1

10

R

Ta = 125°C

Reverse current I

−2

10

−3

10

0 5 10 15 20 25

Reverse voltage VR (V)

75°C

25°C

Ct  V

R

1.2

1.0

(pF)

t

0.8

0.6

0.4

Terminal capacitance C

0.2

0

0 5 10 15 20 25

Reverse voltage VR (V)

T

= 25°C

a

2

SKH00184AED