Schottky Barrier Diodes (SBD)
This product complies with the RoHS Directive (EU 2002/95/EC).
MA2SE01
Silicon epitaxial planar type
For mixer
■ Features
• High-frequency wave detection is possible
• Low forward voltage V
• Small terminal capacitance C
• SS-Mini type 2-pin package
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage V
Maximum peak reverse voltage V
Forward current I
Peak forward current I
Junction temperature T
Storage temperature T
F
t
R
RM
F
FM
j
stg
100 mA
125 °C
−55 to +125 °C
20 V
20 V
35 mA
Unit: mm
+0.05
0.60
+0.05
0.80
–0.03
1
2
0.30±0.05
(0.60)
0.01±0.01
(0.60)
0.01±0.01
0.80±0.05(0.80)
5˚
1: Anode
2: Cathode
EIAJ: SC-79 SSMini2-F1 Package
–0.03
0.12
+0.05
5˚
+0
0
–0.05
Marking Symbol: 4L
+0.05
–0.02
–0.03
1.20
(0.15)
1.60±0.05
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
Reverse current I
F1
V
F2
R
Terminal capacitance C
Forward dynamic resistance r
f
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Rated input/output frequency: 2 GHz
IF = 1 mA 0.41 V
IF = 35 mA 1.0 V
VR = 15 V 200 nA
VR = 0 V, f = 1 MHz 1.2 pF
t
IF = 5 mA 40 Ω
Publication date: April 2003 SKH00030BED
1
MA2SE01
This product complies with the RoHS Directive (EU 2002/95/EC).
IR V
3
10
2
10
10
(µA)
R
1
−1
10
R
Ta = 125°C
Reverse current I
−2
10
−3
10
0 5 10 15 20 25
Reverse voltage VR (V)
75°C
25°C
Ct V
1.2
1.0
(pF)
t
0.8
0.6
0.4
Terminal capacitance C
0.2
0
0 5 10 15 20 25
R
Reverse voltage VR (V)
T
= 25°C
a
2
SKH00030BED