Panasonic MA2SD32 User Manual

Schottky Barrier Diodes (SBD)

This product complies with the RoHS Directive (EU 2002/95/EC).

MA2SD32

Silicon epitaxial planar type

For super high speed switching

■ Features

• I

= 200 mA rectification is possible.

F(AV)

• Small reverse current: I

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Reverse voltage V

Repetitive peak reverse voltage V

Forward current (Average) I

Peak forward current I

Non-repetitive peak forward I
surge current

Junction temperature T

Storage temperature T

Note)* :

*

The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)

< 5 µA (at VR = 30 V)

R

R

RRM

F(AV)

FM

FSM

j

−55 to +125 °C

stg

30 V

30 V

200 mA

300 mA

125 °C

1A

Marking Symbol: 8H

0.80±0.05(0.80)

Unit: mm

+0.05

0.60

–0.03

+0.05

0.80

–0.03

1

(0.60)

0.01±0.01

(0.60)

2

0.30±0.05

5˚

5˚

0.01±0.01

SSMini2-F1 Package

+0.05

0.12

–0.02

+0.05

–0.03

1.20

+0

0

–0.05

(0.15)

1: Anode
2: Cathode

1.60±0.05

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit

Reverse current I

R1

I

R2

Forward voltage V

Terminal capacitance C

Reverse recovery time

*

t

rr

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.

2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body

and the leakage of current from the operating equipment.

3. Absolute frequency of input and output is 250 MHz

4.*: trr measurement circuit

Bias Application Unit (N-50BU)

Pulse Generator
(PG-10N)

= 50 Ω

R

s

A

VR = 10 V 0.5 µA

VR = 30 V 5

IF = 200 mA 0.49 0.56 V

F

VR = 0 V, f = 1 MHz 25 pF

t

IF = IR = 100 mA 2 ns
Irr = 10 mA, RL = 100 Ω

Input Pulse Output Pulse

t

t

p

Wave Form
Analyzer
(SAS-8130)

= 50 Ω

R

i

r

10%

90%

V

R

= 2 µs

t

p

= 0.35 ns

t

r

δ = 0.05

t

I

F

= 100 mA

I

F

= 100 mA

I

R

= 100 Ω

R

L

t

rr

I

= 10 mA

rr

t

Publication date: October 2003 SKH00132AED

1

MA2SD32

This product complies with the RoHS Directive (EU 2002/95/EC).

IF  V

= 125°C

F

−25°C

10

10

10

(mA)

F

10

3

T

2

1

−1

a

75°C

Forward current I

−2

10

−3

10

0 0.1 0.2 0.3 0.4 0.5 0.6

Forward voltage VF (V)

25°C

IR  V

3

10

2

10

(µA)

R

10

1

Reverse current I

−3

10

−2

10

0 5 10 252015 30

R

T

a

Reverse voltage VR (V)

= 125°C

75°C

25°C

Ct  V

25

20

(pF)

t

15

10

Terminal capacitance C

5

1

0 5 10 15 20 25 30

R

Reverse voltage VR (V)

T

= 25°C

a

2

SKH00132AED