Panasonic MA2SD31 User Manual

Schottky Barrier Diodes (SBD)
This product complies with the RoHS Directive (EU 2002/95/EC).
MA2SD31
Silicon epitaxial planar type
For super high speed switching
Features
I
= 200 mA rectification is possible.
Low forward voltage: V
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage V
Repetitive peak reverse voltage V
Forward current (Average) I
Peak forward current I
Non-repetitive peak forward I surge current
Junction temperature T
Storage temperature T
Note)* :
*
The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
< 0.47 V (at IF = 200 mA)
F
R
RRM
F(AV)
FM
FSM
j
stg
200 mA
300 mA
125 °C
55 to +125 °C
30 V
30 V
1A
+0.05
0.80
–0.03
1
0.80±0.05(0.80)
2
0.30±0.05
0.01±0.01
Marking Symbol: 8F
(0.60)
0.01±0.01
(0.60)
SSMini2-F1 Package
0.60
+0.05 –0.03
+0
0
–0.05
1: Anode 2: Cathode
Unit: mm
+0.05
0.12
–0.02
+0.05
–0.03
1.20
(0.15)
1.60±0.05
Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Reverse current I
Forward voltage V
R1
I
R2
F
Terminal capacitance C
Reverse recovery time
*
t
rr
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 250 MHz
4.*: trr measurement circuit
Bias Application Unit (N-50BU)
Pulse Generator (PG-10N)
= 50
R
s
A
VR = 10 V 20 µA
VR = 30 V 200
IF = 200 mA 0.38 0.47 V
VR = 0 V, f = 1 MHz 25 pF
t
IF = IR = 100 mA 2 ns Irr = 10 mA, RL = 100
Input Pulse Output Pulse
t
t
p
Wave Form Analyzer (SAS-8130)
= 50
R
i
r
10%
90%
V
R
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
t
I
F
= 100 mA
I
F
= 100 mA
I
R
= 100
R
L
t
rr
I
= 10 mA
rr
t
Publication date: August 2006 SKH00131BED
1
MA2SD31
This product complies with the RoHS Directive (EU 2002/95/EC).
IF V
F
25°C
10
10
10
(mA)
F
10
3
= 125°C
T
a
2
75°C
1
1
Forward current I
2
10
3
10
0 0.1 0.2 0.3 0.4 0.5 0.6
25°C
Forward voltage VF (V)
IR V
4
10
3
10
(µA)
R
2
10
Reverse current I
10
1
0 5 10 252015 30
R
T
Reverse voltage VR (V)
= 125°C
a
75°C
25°C
Ct V
25
25
(pF)
t
15
10
Terminal capacitance C
5
1
0 5 10 15 20 25 30
R
Reverse voltage VR (V)
T
= 25°C
a
2
SKH00131BED
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