Panasonic MA2SD300G User Manual

This product complies with the RoHS Directive (EU 2002/95/EC).

Schottky Barrier Diodes (SBD)

MA2SD300G

Silicon epitaxial planar type

For super high speed switching

■ Features

• Small reverse current: IR < 2 µA (at VR = 30 V)

• Optimum for high frequency rectification because of its short

reverse recovery time t

.

rr

■ Package

•

Code
SSMini2-F4

•

Pin Name

1: Anode

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Reverse voltage V

Repetitive peak reverse voltage V

Forward current (Average) I

Peak forward current I

Non-repetitive peak forward I

surge current

*

Junction temperature T

Storage temperature T

Note)* :

The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)

R

RRM

F(AV)

FM

FSM

j

stg

30 V

30 V

100 mA

200 mA

125 °C

−55 to +125 °C

1A

2: Cathode

■ Marking Symbol: 8N

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit

Forward voltage V

Reverse current I

F1

V

F2

R1

I

R2

Terminal capacitance C

Reverse recovery time

*

t

rr

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.

2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body

and the leakage of current from the operating equipment.

3. Absolute frequency of input and output is 250 MHz

4.*: trr measurement circuit

IF = 10 mA 0.38 0.44 V

IF = 100 mA 0.51 0.58

VR = 10 V 0.3 µA

VR = 30 V 2

VR = 0 V, f = 1 MHz 9 pF

t

IF = IR = 100 mA 1 ns

Irr = 10 mA, RL = 100 Ω

Bias Application Unit (N-50BU)

Pulse Generator
(PG-10N)

= 50 Ω

R

s

Publication date: October 2007 SKH00181AED

A

Wave Form
Analyzer
(SAS-8130)

= 50 Ω

R

i

Input Pulse Output Pulse

t

t

p

r

10%

90%

V

R

= 2 µs

t

p

= 0.35 ns

t

r

δ = 0.05

t

I

F

= 100 mA

I

F

= 100 mA

I

R

= 100 Ω

R

L

t

rr

= 10 mA

I

rr

t

1

MA2SD300G

This product complies with the RoHS Directive (EU 2002/95/EC).

IF  V

10

10

10

(mA)

F

−1

10

3

2

= 75°C

T

a

1

F

25°C

Forward current I

−2

10

−3

10

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7

−25°C

Forward voltage VF (V)

I

 T

)
A

(m

F(AV)

140

120

100

F(AV)

°C

= 125

T

j

80

60

a

I

F

IR  V

75°C

25°C

= −25°C

a

R

100

(pF)

t

10

Terminal capacitance C

1

0 5 10 15 20 25 30

10

1

(µA)

R

−1

10

−2

10

Reverse current I

−3

10

−4

10

0 5 10 252015 4030 35

T

Reverse voltage VR (V)

t

p

T

Ct  V

R

T

a

Reverse voltage VR (V)

= 25°C

40

20

Forward current (Average) I

0

0DC40 16012080

Ambient temperature Ta (°C

)

2

SKH00181AED