Panasonic MA2SD250G User Manual

This product complies with the RoHS Directive (EU 2002/95/EC).

Schottky Barrier Diodes (SBD)

MA2SD250G

Silicon epitaxial planar type

For super high speed switching

■ Features

•

Forward current (Average) I

= 200 mA rectification is possible

F(AV)

■ Package

•

Code
SSMini2-F4

•

Pin Name

■ Absolute Maximum Ratings Ta = 25°C

1: Anode
2: Cathode

Parameter Symbol Rating Unit

Reverse voltage V

Repetitive peak reverse voltage V

Forward current (Average) I

Peak forward current I

Non-repetitive peak forward I
surge current

*

Junction temperature T

Storage temperature T

R

RRM

F(AV)

FM

FSM

j

stg

15 V

15 V

200 mA

300 mA

1A

125 °C

−55 to +125 °C

■ Marking Symbol: 6L

Note)*: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit

Forward voltage V

Reverse current I

F

R

Terminal capacitance C

Reverse recovery time

*

t

rr

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.

2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body

and the leakage of current from the operating equipment.

3. Absolute frequency of input and output is 250 MHz.

4.*:trr measurement circuit

Bias Application Unit (N-50BU)

A

Pulse Generator
(PG-10N)

= 50 Ω

R

s

Wave Form Analyzer
(SAS-8130)

= 50 Ω

R

i

IF = 200 mA 0.39 V

VR = 6 V 50 µA

VR = 1 V, f = 1 MHz 20 pF

t

IF = IR = 100 mA 3 ns
Irr = 10 mA, RL = 100 Ω

Input Pulse Output Pulse

t

t

p

r

10%

90%

V

R

= 2 µs

t

p

= 0.35 ns

t

r

δ = 0.05

t

I

F

I
I
R

t

I

= 100 mA

F

= 100 mA

R

= 100 Ω

L

rr

= 10 mA

rr

t

Publication date: October 2007 SKH00179AED

1

MA2SD250G

I

3

10

2

10

)
A

10

(m

F

1

−1

10

Forward current I

−2

10

F

Ta = 125°C

This product complies with the RoHS Directive (EU 2002/95/EC).

 V

F

75°C

25°C

−20°C

5

10

4

10

)
A

3

10

(µ

R

2

10

10

Reverse current I

1

IR  V

Ta = 125°C

R

75°C

25°C

40

)
pF

30

(

t

20

10

Terminal capacitance C

Ct  V

R

= 25°C

T

a

−3

10

0 0.2 0.4

Forward voltage VF (V

I

 T

= 125°C

T

j

DC

F(AV)

)
A

(m

F(AV)

300

250

200

150

100

50

Forward current (Average) I

0

0 40 120 16080

Ambient temperature Ta (°C

−1

10

)

01020

Reverse voltage VR (V

)

0

01020

Reverse voltage VR (V

)

a

I

F

t

p

T

)

2

SKH00179AED