
This product complies with the RoHS Directive (EU 2002/95/EC).
Schottky Barrier Diodes (SBD)
MA2S7840G
Silicon epitaxial planar type
For super high speed switching
For small current rectification
■ Features
•
High-density mounting is possible
•
Forward current (Average) I
•
Optimum for high frequency rectification because of its short
reverse recovery time t
•
Low forward voltage V
= 100 mA rectification is possible
F(AV)
rr
and good rectification efficiency
F
■ Package
•
Code
SSMini2-F4
•
Pin Name
1: Anode
2: Cathode
■ Marking Symbol: C
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage V
Repetitive peak reverse voltage V
Forward current (Average) I
Peak forward current I
Non-repetitive peak forward I
surge current
*
Junction temperature T
Storage temperature T
R
RRM
F(AV)
FM
FSM
j
stg
30 V
30 V
100 mA
300 mA
1A
125 °C
−55 to +125 °C
Note)*: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
Reverse current I
F
R
Terminal capacitance C
Reverse recovery time
*
t
rr
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 250 MHz.
4.*:trr measurement circuit
Bias Application Unit (N-50BU)
A
Pulse Generator
(PG-10N)
= 50 Ω
R
s
Publication date: October 2007 SKH00175AED
IF = 100 mA 0.55 V
VR = 30 V 15 µA
VR = 0 V, f = 1 MHz 20 pF
t
IF = IR = 100 mA 2.0 ns
Irr = 0.1 IR , RL = 100 Ω
Input Pulse Output Pulse
t
t
p
Wave Form Analyzer
(SAS-8130)
= 50 Ω
R
i
r
10%
90%
V
R
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
t
I
F
= 100 mA
I
F
= 100 mA
I
R
R
L
t
rr
I
rr
= 100 Ω
= 0.1 I
t
R
1

MA2S7840G
3
10
I
This product complies with the RoHS Directive (EU 2002/95/EC).
V
F
F
4
10
IR V
R
VF T
1.0
a
2
10
Ta = 125°C
)
mA
(
F
10
1
Forward current I
−1
10
−2
10
0 0.2 0.4 0.6 0.8
75°C
25°C
−20°C
Forward voltage VF (V
IR T
4
10
3
10
)
µA
(
R
2
10
10
a
Reverse current I
1
−1
10
−40 0 40 80 120 160 200
Ambient temperature Ta (°C
)
VR = 30 V
3 V
1 V
)
3
10
)
µA
(
R
2
10
10
Reverse current I
1
−1
10
0 5 10 15 20 25 30
Reverse voltage VR (V
Ct V
24
20
)
pF
(
t
16
12
8
Terminal capacitance C
4
0
0 5 10 15 20 25 30
R
Reverse voltage VR (V
Ta = 125°C
75°C
25°C
)
f = 1 MHz
= 25°C
T
a
)
0.8
)
V
(
F
0.6
0.4
IF = 100 mA
Forward voltage V
0.2
0
−40 0 40 80 120 160 200
10 mA
3 mA
Ambient temperature Ta (°C
I
T
T
= 125
j
F(AV)
°C
140
)
A
120
(m
100
F(AV)
80
60
40
20
Forward current (Average) I
0
0DC40 16012080
a
I
F
t
p
Ambient temperature Ta (°C
)
T
)
2
SKH00175AED

This product complies with the RoHS Directive (EU 2002/95/EC).
MA2S7840G
SSMini2-F4
2
1
0.80
+0.05
−0.03
0.30
±0.05
Unit: mm
+0.05
0.13
−0.02
±0.05
−0.03
+0.05
1.60
0 to 0.05
5°
1.20
±0.05
0.20
5°
−0.03
+0.05
0.60
(0.15)
SKH00175AED
3

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semiconductors described in this book
(1)If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2)The technical information described in this book is intended only to show the main characteristics and application circuit examples
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company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
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Consult our sales staff in advance for information on the following applications:
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(4)The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5)When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6)Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
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