Panasonic MA2S7840G User Manual
This product complies with the RoHS Directive (EU 2002/95/EC).
Schottky Barrier Diodes (SBD)
MA2S7840G
Silicon epitaxial planar type
For super high speed switching
For small current rectification
■ Features
•
High-density mounting is possible
•
Forward current (Average) I
•
Optimum for high frequency rectification because of its short
reverse recovery time t
•
Low forward voltage V
= 100 mA rectification is possible
F(AV)
rr
and good rectification efficiency
F
■ Package
•
Code
SSMini2-F4
•
Pin Name
1: Anode
2: Cathode
■ Marking Symbol: C
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage V
Repetitive peak reverse voltage V
Forward current (Average) I
Peak forward current I
Non-repetitive peak forward I
surge current
*
Junction temperature T
Storage temperature T
R
RRM
F(AV)
FM
FSM
j
stg
30 V
30 V
100 mA
300 mA
1A
125 °C
−55 to +125 °C
Note)*: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
Reverse current I
F
R
Terminal capacitance C
Reverse recovery time
*
t
rr
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 250 MHz.
4.*:trr measurement circuit
Bias Application Unit (N-50BU)
A
Pulse Generator
(PG-10N)
= 50 Ω
R
s
Publication date: October 2007 SKH00175AED
IF = 100 mA 0.55 V
VR = 30 V 15 µA
VR = 0 V, f = 1 MHz 20 pF
t
IF = IR = 100 mA 2.0 ns
Irr = 0.1 IR , RL = 100 Ω
Input Pulse Output Pulse
t
t
p
Wave Form Analyzer
(SAS-8130)
= 50 Ω
R
i
r
10%
90%
V
R
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
t
I
F
= 100 mA
I
F
= 100 mA
I
R
R
L
t
rr
I
rr
= 100 Ω
= 0.1 I
t
R
1
MA2S7840G
3
10
I
This product complies with the RoHS Directive (EU 2002/95/EC).
V
F
F
4
10
IR V
R
VF T
1.0
a
2
10
Ta = 125°C
)
mA
(
F
10
1
Forward current I
−1
10
−2
10
0 0.2 0.4 0.6 0.8
75°C
25°C
−20°C
Forward voltage VF (V
IR T
4
10
3
10
)
µA
(
R
2
10
10
a
Reverse current I
1
−1
10
−40 0 40 80 120 160 200
Ambient temperature Ta (°C
)
VR = 30 V
3 V
1 V
)
3
10
)
µA
(
R
2
10
10
Reverse current I
1
−1
10
0 5 10 15 20 25 30
Reverse voltage VR (V
Ct V
24
20
)
pF
(
t
16
12
8
Terminal capacitance C
4
0
0 5 10 15 20 25 30
R
Reverse voltage VR (V
Ta = 125°C
75°C
25°C
)
f = 1 MHz
= 25°C
T
a
)
0.8
)
V
(
F
0.6
0.4
IF = 100 mA
Forward voltage V
0.2
0
−40 0 40 80 120 160 200
10 mA
3 mA
Ambient temperature Ta (°C
I
T
T
= 125
j
F(AV)
°C
140
)
A
120
(m
100
F(AV)
80
60
40
20
Forward current (Average) I
0
0DC40 16012080
a
I
F
t
p
Ambient temperature Ta (°C
)
T
)
2
SKH00175AED
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