Panasonic MA2S728 Datasheet

Schottky Barrier Diodes (SBD)

MA2S728

Silicon epitaxial planar type

For switching circuits

Unit : mm

■ Features

•

Super-small SS-mini type 2-pin package

•

Allowing high-density mounting

•

Low forward rise voltage (V

) and satisfactory wave detection

F

0.30 ± 0.05

12

+ 0.05

− 0.03

0.80

efficiency (η)

•

Small temperature coefficient of forward characteristic

+ 0.05

− 0.02

+ 0.05

•

Extremely low reverse current I

R

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Reverse voltage (DC) V

Peak reverse voltage V

Peak forward current I

Forward current (DC) I

Junction temperature T

Storage temperature T

R

RM

FM

F

j

−55 to +125 °C

stg

150 mA

125 °C

30 V

30 V

30 mA

0.01 ± 0.01

+ 0

− 0.05

0

1.20

1.60 ± 0.05

+ 0.05

− 0.03

SS-Mini Type Package (2-pin)

Marking Symbol: B

0.12

− 0.03

0.60

1 : Anode
2 : Cathode

■ Electrical Characteristics Ta = 25°C

Parameter Symbol Conditions Min Typ Max Unit

Reverse current (DC) I

Forward voltage (DC) V

R

F1

V

F2

Terminal capacitance C

Reverse recovery time

*

t

rr

Detection efficiency η Vin = 3 V

Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a

human body and the leakage of current from the operating equipment

  2. Rated input/output frequency: 2 000 MHz

3. * : trr measuring instrument

VR = 30 V 300 nA

IF = 1 mA 0.4 V

IF = 30 mA 1 V

VR = 1 V, f = 1 MHz 1.5 pF

t

IF = IR = 10 mA 1 ns

Irr = 1 mA, RL = 100 Ω

, f = 30 MHz 65 %

(peak)

RL = 3.9 kΩ , CL = 10 pF

Pulse Generator
(PG-10N)
R

= 50 Ω

s

Bias Application Unit N-50BU

A

W.F.Analyzer
(SAS-8130)
R

= 50 Ω

i

Input Pulse Output Pulse

t

t

p

r

10%

90%

V

R

t

p

= 0.35 ns

t

r

δ = 0.05

t

= 2 µs

I

F

= 10 mA

I

F

= 10 mA

I

R

= 100 Ω

R

L

t

rr

I

= 1 mA

rr

t

1

MA2S728

Schottky Barrier Diodes (SBD)

IF  V

3

10

2

10

)

mA

(

F

10

1

Forward current I

–1

10

–2

10

0 0.2 0.4 0.6 0.8 1.0 1.2

Ta = 125°C

F

75°C 25°C

Forward voltage VF (V

Ct  V

3.0

2.5

)
pF

(

t

2.0

1.5

1.0

Terminal capacitance C

0.5

0

0 5 10 15 20 25 30

R

Reverse voltage VR (V

− 20°C

)

)

VF  T

1.6

1.4

)

1.2

V
(

F

1.0

0.8

0.6

0.4

Forward voltage V

0.2

0

−40 0 40 80 120 160 200

a

IF = 30 mA

3 mA

1 mA

Ambient temperature Ta (°C

IR  T

1 000

100

)
µA

(

R

10

1

Reverse current I

0.1

0.01

−40 0 40 80 120 160 200

a

VR = 30 V

10 V
1 V

Ambient temperature Ta (°C

IR  V

 t

R

W

Ta = 25°C

t

Ta = 125°C

75°C

25°C

)

I

F(surge)

W

)

3

10

2

10

)
µA

(

R

10

1

Reverse current I

−1

10

−2

10

0 5 10 15 20 25 30

)

1 000

)
A

(

F(surge)

Forward surge current I

)

Reverse voltage VR (V

I

F(surge)

300

100

30

10

3

1

0.3

0.1

0.1 1 1030.3

0.03 30

Pulse width tW (ms

2