Panasonic MA2S377 Datasheet
Variable Capacitance Diodes
MA2S377
Silicon epitaxial planar type
For VCO and TCXO
■ Features
•
SS-mini type package, allowing downsizing of equipment and
automatic insertion through the taping package
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage (DC) V
Forward current (DC) I
Junction temperature T
Storage temperature T
R
F
j
stg
12 V
20 mA
150 °C
−55 to +150 °C
Unit : mm
0.15 min.
− 0.02
+ 0.05
0.8 ± 0.10.7 ± 0.1
0.27
SS-Mini Type Package (2-pin)
1.3 ± 0.1
1.7 ± 0.1
0 to 0.1
0.15 min.
− 0.02
+ 0.05
0.27
− 0.02
+ 0.05
0.13
1 : Anode
2 : Cathode
Marking Symbol: 7
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Reverse current (DC) I
Diode capacitance C
Capacitance ratio
Series resistance
*
R
D(2V)
C
D(10V)
C
D(2V)/CD(10V)
r
D
Note) 1．Rated input/output frequency: 470 MHz
2．*: rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER
VR = 12 V 10 nA
VR = 2 V, f = 1 MHz 2.80 3.40 pF
VR = 10 V, f = 1 MHz 1.10 1.50 pF
VR = 1 V, f = 470 MHz 0.40 0.60 Ω
2.20 2.80
1
MA2S377
Variable Capacitance Diodes
CD V
10
8
7
6
5
(pF)
D
4
3
2
Diode capacitance C
1
100
10
(nA)
R
1
0
10 12 14 16 18 20 22 24 26 28 30
2468
Reverse voltage VR (V)
IR T
R
a
VR = 28 V
f = 1 MHz
= 25°C
T
a
IF V
120
100
(mA)
F
50
Ta = 60°C
F
25°C
− 40°C
Forward current I
0
0.4 0.9 1.4
Forward voltage VF (V)
1.030
CD T
1.020
)
°
)
a
1.010
25
=
(T
a
D
C
(T
D
C
1.000
0.990
0.986
0 20406080100
VR = 2 V
Ambient temperature Ta (°C)
a
f = 1 MHz
10 V
0.1
Reverse current I
0.01
0.001
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
2
Loading...