Panasonic MA2S372 Datasheet
Variable Capacitance Diodes
MA2S372
Silicon epitaxial planar type
For UHF and VHF electronic tuners
■ Features
•
Large capacitance ratio
•
Small series resistance r
•
SS-mini type package, allowing downsizing of equipment and
automatic insertion through the taping package
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage (DC) V
Peak reverse voltage
Forward current (DC) I
Junction temperature T
Storage temperature T
Note) * : RL = 2.2 kΩ
D
*
R
V
RM
F
j
stg
32 V
34 V
20 mA
150 °C
−55 to +150 °C
0.15 min.
− 0.02
+ 0.05
0.8 ± 0.10.7 ± 0.1
0.27
SS-Mini Type Package (2-pin)
Marking Symbol: L
1.3 ± 0.1
1.7 ± 0.1
0 to 0.1
Unit : mm
0.15 min.
1 : Anode
2 : Cathode
− 0.02
+ 0.05
0.27
− 0.02
+ 0.05
0.13
■ Electrical Characteristics Ta = 25°C
Parameter Symbol Conditions Min Typ Max Unit
Reverse current (DC) I
Diode capacitance C
Capacitance ratio
Diode capacitance deviation
Series resistance
*
R
D(2V)
C
D(25V)
C
D(10V)
C
D(17V)
C
D(2V)/CD(25V)
C
D(10V)/CD(17V)
∆C
r
D
Note) 1．Rated input/output frequency: 470 MHz
2．*: rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER
VR = 30 V 10 nA
VR = 2 V, f = 1 MHz 14.220 15.473 pF
VR = 25 V, f = 1 MHz 2.132 2.287 pF
VR = 10 V, f = 1 MHz 5.307 6.128 pF
VR = 17 V, f = 1 MHz 2.909 3.411 pF
C
D(2V)(10V)(17V)(25V)
CD = 9 pF, f = 470 MHz 0.45 Ω
6.22
1.70 1.96
2.0 %
1
MA2S372
Variable Capacitance Diodes
100
CD V
50
)
pF
30
(
D
20
10
5
3
Diode capacitance C
2
1
0 8 16 24 324 1220283640
R
f = 1 MHz
= 25°C
T
a
Reverse voltage VR (V
IR T
100
)
10
nA
(
R
1
a
VR = 30 V
CD T
a
f = 1 MHz
VR = 2 V
25 V
10 V
17 V
)
mA
(
F
120
100
IF V
F
25°C
80
60
40
Ta = 60°C
− 40°C
1.04
1.03
1.02
)
)
a
T
(
1.01
= 25°C
D
a
C
T
(
D
C
1.00
Forward current I
20
0
)
0 0.2 0.4 0.6 0.8 1.0 1.2
Forward voltage VF (V
)
0.99
0.98
0 20 40 60 80 100
Ambient temperature Ta (°C
)
0.1
Reverse current I
0.01
0 40 80 120 16020 60 100 140
Ambient temperature Ta (°C
)
2
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