Panasonic MA2S357 Datasheet
Variable Capacitance Diodes
MA2S357
Silicon epitaxial planar type
For CATV tuner
■ Features
•
Large capacitance ratio
•
Small series resistance r
•
SS-mini type package, allowing downsizing of equipment and
automatic insertion through the taping package
D
Unit : mm
0.15 min.
− 0.02
+ 0.05
0.8 ± 0.10.7 ± 0.1
0.27
1.3 ± 0.1
1.7 ± 0.1
0.15 min.
− 0.02
+ 0.05
0.27
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage (DC) V
Peak reverse voltage
*
V
Junction temperature T
Storage temperature T
R
RM
j
stg
34 V
35 V
150 °C
−55 to +150 °C
Note) * : RL = 10 kΩ
■ Electrical Characteristics Ta = 25°C
Parameter Symbol Conditions Min Typ Max Unit
Reverse current (DC) I
Diode capacitance C
Capacitance ratio
R
D(0V)
C
D(2V)
C
D(25V)
C
D(10V)
C
D(17V)
C
D(2V)/CD(25V)
Diode capacitance deviation ∆CC
2
Series resistance
*
r
D
Note) 1．Rated input/output frequency: 470 MHz
2．*1: Measurement at Low Signal Level
*2:rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER
VR = 30 V 10 nA
1
*
VR = 0 V, f = 1 MHz 58.0 pF
VR = 2 V, f = 1 MHz 29.00 34.30 pF
VR = 25 V, f = 1 MHz 2.53 2.92 pF
VR = 10 V, f = 1 MHz 6.40 8.32 pF
VR = 17 V, f = 1 MHz 3.50 4.35 pF
D(2V)(10V)(17V)(25V)
CD = 9 pF, f = 470 MHz 0.54 Ω
SS-Mini Type Package (2-pin)
Marking Symbol: N
11.0
0 to 0.1
1 : Anode
2 : Cathode
2.0 %
− 0.02
+ 0.05
0.13
1
MA2S357
Variable Capacitance Diodes
100
CD V
50
)
pF
30
(
D
20
10
5
3
Diode capacitance C
2
1
0 8 16 24 324 1220283640
R
f = 1 MHz
T
a
Reverse voltage VR (V
IR T
100
)
10
nA
(
R
1
a
VR = 30 V
= 25°C
)
IF V
120
100
F
)
mA
(
F
80
60
40
Ta = 60°C
Forward current I
20
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Forward voltage VF (V
25°C
− 40°C
)
1.04
CD T
1.03
1.02
)
)
a
T
(
1.01
= 25°C
D
a
C
T
(
D
C
1.00
0.99
0.98
0 20 40 60 80 100
Ambient temperature Ta (°C
a
f = 1 MHz
VR = 2 V
10 V
25 V
17 V
)
0.1
Reverse current I
0.01
0 40 80 120 16020 60 100 140
Ambient temperature Ta (°C
)
2
Loading...