Panasonic MA2S304 Datasheet
Variable Capacitance Diodes
MA2S304
Silicon epitaxial planar type
For VCO
■ Features
•
Good linearity and large capacitance-ratio in C
•
Small series resistance r
•
SS-mini type package, allowing downsizing of equipment and
D
automatic insertion through the taping package
VR relation
D
Unit : mm
0.15 min.
− 0.02
+ 0.05
0.8 ± 0.10.7 ± 0.1
0.27
1.3 ± 0.1
1.7 ± 0.1
0.15 min.
− 0.02
+ 0.05
0.27
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage (DC) V
Junction temperature T
Storage temperature T
R
j
stg
30 V
150 °C
−55 to +150 °C
Marking Symbol: K
■ Electrical Characteristics Ta = 25°C
Parameter Symbol Conditions Min Typ Max Unit
Reverse current (DC) I
Diode capacitance C
Capacitance ratio
Series resistance
*
R
D(1V)
C
D(4V)
C
D(1V)/CD(4V)
r
D
Note) 1．Rated input/output frequency: 100 MHz
2．*: rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER
VR = 28 V 10 nA
VR = 1 V, f = 1 MHz 24.8 29.8 pF
VR = 4 V, f = 1 MHz 6.0 8.3 pF
VR = 4 V, f = 100 MHz 1.0 Ω
− 0.02
+ 0.05
0.13
0 to 0.1
1 : Anode
SS-Mini Type Package (2-pin)
2 : Cathode
3.0
1
MA2S304
Variable Capacitance Diodes
100
CD V
50
)
pF
30
(
D
20
10
5
3
Diode capacitance C
2
1
0 8 16 24 324 1220283640
R
f = 1 MHz
T
a
Reverse voltage VR (V
IR T
a
VR = 28 V
)
nA
(
100
10
R
1
= 25°C
)
IF V
120
100
F
25°C
)
mA
(
F
80
60
40
Ta = 60°C
Forward current I
20
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Forward voltage VF (V
− 40°C
)
CD T
1.04
1.03
1.02
)
)
a
T
(
1.01
= 25°C
D
a
C
T
(
D
C
1.00
0.99
0.98
0 20 40 60 80 100
Ambient temperature Ta (°C
a
f = 1 MHz
VR = 4 V
1 V
)
0.1
Reverse current I
0.01
0 40 80 120 16020 60 100 140
Ambient temperature Ta (°C
)
2
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