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Switching Diodes
MA2S111
Silicon epitaxial planar type
For switching circuits
■ Features
•
Super-small SS-mini type package
•
Allowing high-density mounting
•
Short reverse recovery time t
•
Small terminal capacitance, C
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage (DC) V
Peak reverse voltage V
Average forward current I
Peak forward current I
Non-repetitive peak forward I
surge current
Junction temperature T
Storage temperature T
Note) * : t = 1 s
*
rr
t
R
RM
F(AV)
FM
FSM
j
stg
100 mA
225 mA
500 mA
150 °C
−55 to +150 °C
80 V
80 V
( 0.2 )
− 0.03
+ 0.05
12
0.6 ± 0.05 0.80
SS-Mini Type Package (2-pin)
Marking Symbol: A
1.60 ± 0.05
+ 0.05
− 0.03
1.20
Unit : mm
0.30 ± 0.050.15 ± 0.05
1 : Anode
2 : Cathode
EIAJ : SC-79
■ Electrical Characteristics Ta = 25°C
Parameter Symbol Conditions Min Typ Max Unit
Reverse current (DC) I
Forward voltage (DC) V
Reverse voltage (DC) V
Terminal capacitance C
Reverse recovery time
*
Note) 1. Rated input/output frequency: 100 MHz
2. * : trr measuring circuit
Bias Application Unit N-50BU
Pulse Generator
(PG-10N)
= 50 Ω
R
s
A
R
F
R
t
t
rr
W.F.Analyzer
(SAS-8130)
= 50 Ω
R
i
VR = 75 V 100 nA
IF = 100 mA 0.95 1.2 V
IR =100 µA80V
VR = 0 V, f = 1 MHz 0.6 2 pF
IF = 10 mA, VR = 6 V 3 ns
Irr = 0.1 · IR, RL = 100 Ω
Input Pulse Output Pulse
t
t
p
r
10%
90%
V
R
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
t
I
F
= 10 mA
I
F
= 6 V
V
R
= 100 Ω
R
L
t
rr
I
= 0.1 · I
rr
t
R
1
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MA2S111
Switching Diodes
IF V
3
10
2
10
)
mA
(
F
10
1
Forward current I
−1
10
−2
10
C
Ta = 150°
C
100°
C
25°
C
− 20°
0 0.2 0.4 0.6 0.8 1.0 1.2
F
Forward voltage VF (V
IR T
5
10
4
10
)
A
(n
R
3
10
2
10
Reverse current I
10
1
−40 0 40 80 120 160 200
a
VR = 75 V
Ambient temperature Ta (°C
35 V
6 V
IR V
Ct V
R
Ta = 150°
100°
25°
R
f = 1 MHz
T
C
= 25°
a
1.6
C
C
1.4
)
1.2
V
(
F
1.0
0.8
0.6
0.4
Forward voltage V
0.2
0
−40 0 40 80 120 160 200
)
1 000
C
300
)
A
(
100
F(surge)
30
10
3
1
Forward surge current I
0.3
0.1
)
5
10
4
10
)
nA
(
R
3
10
2
10
Reverse current I
10
1
)
)
0 20406080100120
Reverse voltage VR (V
1.2
1.0
)
pF
(
t
0.8
0.6
0.4
Terminal capacitance C
0.2
0
0 20406080100120
Reverse voltage VR (V
VF T
a
IF = 100 mA
10 mA
3 mA
Ambient temperature Ta (°C
I
t
F(surge)
0.3 3 301010.1
Pulse width tW (ms
W
Ta = 25°
I
F(surge)
t
W
Non repetitive
)
)
C
2