Panasonic MA2S111 Datasheet

Switching Diodes

MA2S111

Silicon epitaxial planar type

For switching circuits

■ Features

•

Super-small SS-mini type package

•

Allowing high-density mounting

•

Short reverse recovery time t

•

Small terminal capacitance, C

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Reverse voltage (DC) V

Peak reverse voltage V

Average forward current I

Peak forward current I

Non-repetitive peak forward I

surge current

Junction temperature T

Storage temperature T

Note) * : t = 1 s

*

rr

t

R

RM

F(AV)

FM

FSM

j

stg

100 mA

225 mA

500 mA

150 °C

−55 to +150 °C

80 V

80 V

( 0.2 )

− 0.03

+ 0.05

12

0.6 ± 0.05 0.80

SS-Mini Type Package (2-pin)

Marking Symbol: A

1.60 ± 0.05

+ 0.05

− 0.03

1.20

Unit : mm

0.30 ± 0.050.15 ± 0.05

1 : Anode 2 : Cathode

EIAJ : SC-79

■ Electrical Characteristics Ta = 25°C

Parameter Symbol Conditions Min Typ Max Unit

Reverse current (DC) I

Forward voltage (DC) V

Reverse voltage (DC) V

Terminal capacitance C

Reverse recovery time

*

Note) 1. Rated input/output frequency: 100 MHz

2. * : trr measuring circuit

Bias Application Unit N-50BU

Pulse Generator (PG-10N)

= 50 Ω

R

s

A

R

F

R

t

t

rr

W.F.Analyzer (SAS-8130)

= 50 Ω

R

i

VR = 75 V 100 nA

IF = 100 mA 0.95 1.2 V

IR =100 µA80V

VR = 0 V, f = 1 MHz 0.6 2 pF

IF = 10 mA, VR = 6 V 3 ns

Irr = 0.1 · IR, RL = 100 Ω

Input Pulse Output Pulse

t

t

p

r

10%

90%

V

R

= 2 µs

t

p

= 0.35 ns

t

r

δ = 0.05

t

I

F

= 10 mA

I

F

= 6 V

V

R

= 100 Ω

R

L

t

rr

I

= 0.1 · I

rr

t

R

1

MA2S111

Switching Diodes

IF  V

3

10

2

10

)

mA (

F

10

1

Forward current I

−1

10

−2

10

C

Ta = 150°

C

100°

C

25°

C

− 20°

0 0.2 0.4 0.6 0.8 1.0 1.2

F

Forward voltage VF (V

IR  T

5

10

4

10

) A (n

R

3

10

2

10

Reverse current I

10

1

−40 0 40 80 120 160 200

a

VR = 75 V

Ambient temperature Ta (°C

35 V

6 V

IR  V

Ct  V

R

Ta = 150°

100°

25°

R

f = 1 MHz T

C

= 25°

a

1.6

C

C

1.4

)

1.2

V (

F

1.0

0.8

0.6

0.4

Forward voltage V

0.2

0

−40 0 40 80 120 160 200

)

1 000

C

300

) A

(

100

F(surge)

30

10

3

1

Forward surge current I

0.3

0.1

)

5

10

4

10

) nA

(

R

3

10

2

10

Reverse current I

10

1

)

)

0 20406080100120

Reverse voltage VR (V

1.2

1.0

) pF

(

t

0.8

0.6

0.4

Terminal capacitance C

0.2

0

0 20406080100120

Reverse voltage VR (V

VF  T

a

IF = 100 mA

10 mA

3 mA

Ambient temperature Ta (°C

I

 t

F(surge)

0.3 3 301010.1

Pulse width tW (ms

W

Ta = 25°

I

F(surge)

t

W

Non repetitive

)

)

C

2

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