Panasonic MA2S1010G User Manual
This product complies with the RoHS Directive (EU 2002/95/EC).
Switching Diodes
MA2S1010G
Silicon epitaxial planar type
For switching circuits
■ Features
• High breakdown voltage: VR = 250 V
• Small terminal capacitance C
• Suitable for high-density mounting
t
■ Package
•
Code
SSMini2-F4
•
Pin Name
1: Anode
2: Cathode
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage V
Repetitive peak reverse voltage V
Forward current I
Peak forward current I
Non-repetitive peak forward I
surge current
*
Junction temperature T
Storage temperature T
Note)*:t = 1 s
R
RRM
F
FM
FSM
j
stg
250 V
250 V
100 mA
225 mA
500 mA
150 °C
−55 to +150 °C
■ Marking Symbol: 1P
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
Reverse current I
F
R
Terminal capacitance C
Reverse recovery time
*
t
rr
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 20 MHz.
3.*: trr measurement circuit
IF = 70 mA 1.2 V
VR = 250 V 1.0 µA
VR = 0 V, f = 1 MHz 3.0 pF
t
IF = IR = 10 mA
Irr = 1 mA , RL = 100 Ω
60 ns
Bias Application Unit N-50BU
A
V
R
Pulse Generator
(PG-10N)
= 50 Ω
R
s
Publication date: October 2007 SKF00074AED
Wave Form Analyzer
(SAS-8130)
= 50 Ω
R
i
Input Pulse Output Pulse
t
t
p
r
10%
90%
= 2 µs
t
p
t
= 0.35 ns
r
δ = 0.05
t
I
F
I
= IR = 10 mA
F
R
= 100 Ω
L
t
rr
I
rr
t
= 1 mA
1
MA2S1010G
This product complies with the RoHS Directive (EU 2002/95/EC).
IF V
3
10
2
10
Ta = 150°C
F
)
mA
10
(
F
100°C
1
−1
10
−20°C
Forward current I
−2
10
−3
10
0 0.2 0.6 0.8 1.0 1.20.4 1.4
Forward voltage VF (V
25°C
IR V
Ta = 150°C
100°C
25°C
R
0.7
0.6
)
pF
(
0.5
t
0.4
0.3
0.2
Terminal capacitance C
0.1
0
0 300200100
)
2
10
10
)
nA
(
R
1
−1
10
Reverse current I
−2
10
−3
10
)
0 30025020050 150100
Reverse voltage VR (V
Ct V
R
Ta = 25°C
Reverse voltage VR (V
)
2
SKF00074AED
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