Panasonic MA2S077G User Manual
This product complies with the RoHS Directive (EU 2002/95/EC).
Band Switching Diodes
MA2S077G
Silicon epitaxial planar type
For band switching
■ Features
• Low forward dynamic resistance r
• Less voltage dependence of diode capacitance C
• SS-Mini type package, allowing downsizing of equipment and
automatic insertion through the taping package
f
D
■ Package
•
Code
SSMini2-F4
•
Pin Name
1: Anode
2: Cathode
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage V
Forward current I
Operating ambient temperature *T
Storage temperature T
Note)*: Maximum ambient temperature during operation.
R
F
opr
stg
35 V
100 mA
−25 to +85 °C
−55 to +150 °C
■ Marking Symbol: S
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
Reverse current I
Diode capacitance C
Forward dynamic resistance
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 100 MHz.
3.*: Measuring instrument; YHP MODEL 4191A RF IMPEDANCE ANALYZER
*
F
R
D
r
f
IF = 100 mA 0.92 1.00 V
VR = 33 V 0.01 100.00 nA
VR = 6 V, f = 1 MHz 0.9 1.2 pF
IF = 2 mA, f = 100 MHz 0.65 0.85 Ω
Publication date: October 2007 SKG00018AED
1
MA2S077G
This product complies with the RoHS Directive (EU 2002/95/EC).
V
I
F
3
10
2
)
10
mA
(
F
10
Forward current I
1
−1
10
0 0.2 0.4 0.6 0.8 1.0
F
Forward voltage VF (V
rf I
1.0
)
Ω
(
0.8
f
0.6
F
Ta = 25°C
)
f = 100 MHz
= 25°C
T
a
2
10
)
pF
(
10
D
1
CD V
Diode capacitance C
−1
10
0 8 16 24 4032
Reverse voltage VR (V
rf f
1.0
)
Ω
(
0.8
f
0.6
R
f = 1 MHz
= 25°C
T
a
)
IF = 2 mA
= 25°C
T
a
IR T
3
10
2
)
10
nA
(
R
10
Reverse current I
1
−1
10
0 40 80 120 160
a
Ambient temperature Ta (°C
VR = 33 V
)
0.4
0.2
Forward dynamic resistance r
0
11010
Forward current IF (mA
2
)
0.4
0.2
Forward dynamic resistance r
0
10 10
2
Frequency f (MHz
3
10
)
2
SKG00018AED
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