Panasonic MA2Q739 Datasheet

Schottky Barrier Diodes (SBD)

MA2Q739

Silicon epitaxial planar type

For high-frequency rectification

■ Features

•

Forward current (average) I

•

Reverse voltage (DC value) V

•

Allowing automatic insertion with the emboss taping

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Reverse voltage (DC) V

Repetitive peak reverse voltage

1

Average forward current

Non-repetitive peak forward I

2

surge current

*

Junction temperature T

Storage temperature T

Note) *1: With a printed-circuit board

*2: The peak-to-peak value in one cycle of 50 Hz sine-wave

(non-repetitive)

*

: 0.7 A type

F(AV)

: 90 V

R

V

I

F(AV)

R

RRM

FSM

−40 to +125 °C

j

−40 to +125 °C

stg

90 V

90 V

0.7 A

10 A

4.4 ± 0.3 0 to 0.05

2.5 ± 0.3

21

+ 0.1

− 0.05

0.25

+ 0.4

5.0

− 0.1

New Mini-Power Type Package (2-pin)

Marking Symbol: PE

Unit : mm

1.4 ± 0.2

2.15 ± 0.3

1.2 ± 0.41.2 ± 0.4

1 : Anode
2 : Cathode

■ Electrical Characteristics Ta = 25°C

Parameter Symbol Conditions Min Typ Max Unit

Reverse current (DC) I

R

Forward voltage (DC) V

Terminal capacitance C

Reverse recovery time

*

t

rr

Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a

human body and the leakage of current from the operating equipment.

  2. Rated input/output frequency: 10 MHz

3. * : trr measuring instrument

Bias Application Unit N-50BU

A

Pulse Generator
(PG-10N)

= 50 Ω

R

s

W.F.Analyzer
(SAS-8130)

= 50 Ω

R

i

VR = 90 V 1 mA

IF = 0.7 A 0.8 V

F

VR = 10 V, f = 1 MHz 50 pF

t

IF = IR = 100 mA 100 ns

Irr = 10 mA, RL = 100 Ω

Input Pulse Output Pulse

t

t

p

r

10%

90%

V

R

= 2 µs

t

p

= 0.35 ns

t

r

δ = 0.05

t

I

F

I
I
R

t

I

= 100 mA

F

= 100 mA

R

= 100 Ω

L

rr

= 10 mA

rr

t

1

MA2Q739

Schottky Barrier Diodes (SBD)

IF  V

10

1

)

Ta = 125°C

A

(

F

0.1

0.01

− 20°C

F

75°C

25°C

Forward current I

0.001

0.000 1
0 0.2 0.4 0.6 0.8 1.0 1.2

Forward voltage VF (V

IR  T

a

VR = 90 V

)

mA
(

R

100

10

1

0.1

50 V
10 V

VF  T

Ct  V

a

IF = 700 mA

300 mA

10 mA

R

f = 1 MHz

= 25°C

T

a

)

1.6

1.4

)

1.2

V
(

F

1.0

0.8

0.6

0.4

Forward voltage V

0.2

0

)

−40 0 40 80 120 160 200

Ambient temperature Ta (°C

400

)
pF

300

(

t

200

100

10

)

mA
(

R

1

0.1

Reverse current I

0.01

0.001
0 20406080100120

IR  V

R

Ta = 125°C

Reverse voltage VR (V

75°C

25°C

)

Reverse current I

0.01

0.001

−40 0 40 80 120 160 200

Ambient temperature Ta (°C

100

Terminal capacitance C

0

0 20406080100120

)

Reverse voltage VR (V

)

2