![](/html/69/6914/691488a5736f92da6af56c0527a1c2558b64f8114c7b7075d0925346756da4b0/bg1.png)
Schottky Barrier Diodes (SBD)
MA2Q739
Silicon epitaxial planar type
For high-frequency rectification
■ Features
•
Forward current (average) I
•
Reverse voltage (DC value) V
•
Allowing automatic insertion with the emboss taping
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage (DC) V
Repetitive peak reverse voltage
1
Average forward current
Non-repetitive peak forward I
2
surge current
*
Junction temperature T
Storage temperature T
Note) *1: With a printed-circuit board
*2: The peak-to-peak value in one cycle of 50 Hz sine-wave
(non-repetitive)
*
: 0.7 A type
F(AV)
: 90 V
R
V
I
F(AV)
R
RRM
FSM
−40 to +125 °C
j
−40 to +125 °C
stg
90 V
90 V
0.7 A
10 A
4.4 ± 0.3 0 to 0.05
2.5 ± 0.3
21
+ 0.1
− 0.05
0.25
+ 0.4
5.0
− 0.1
New Mini-Power Type Package (2-pin)
Marking Symbol: PE
Unit : mm
1.4 ± 0.2
2.15 ± 0.3
1.2 ± 0.41.2 ± 0.4
1 : Anode
2 : Cathode
■ Electrical Characteristics Ta = 25°C
Parameter Symbol Conditions Min Typ Max Unit
Reverse current (DC) I
R
Forward voltage (DC) V
Terminal capacitance C
Reverse recovery time
*
t
rr
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment.
2. Rated input/output frequency: 10 MHz
3. * : trr measuring instrument
Bias Application Unit N-50BU
A
Pulse Generator
(PG-10N)
= 50 Ω
R
s
W.F.Analyzer
(SAS-8130)
= 50 Ω
R
i
VR = 90 V 1 mA
IF = 0.7 A 0.8 V
F
VR = 10 V, f = 1 MHz 50 pF
t
IF = IR = 100 mA 100 ns
Irr = 10 mA, RL = 100 Ω
Input Pulse Output Pulse
t
t
p
r
10%
90%
V
R
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
t
I
F
I
I
R
t
I
= 100 mA
F
= 100 mA
R
= 100 Ω
L
rr
= 10 mA
rr
t
1
![](/html/69/6914/691488a5736f92da6af56c0527a1c2558b64f8114c7b7075d0925346756da4b0/bg2.png)
MA2Q739
Schottky Barrier Diodes (SBD)
IF V
10
1
)
Ta = 125°C
A
(
F
0.1
0.01
− 20°C
F
75°C
25°C
Forward current I
0.001
0.000 1
0 0.2 0.4 0.6 0.8 1.0 1.2
Forward voltage VF (V
IR T
a
VR = 90 V
)
mA
(
R
100
10
1
0.1
50 V
10 V
VF T
Ct V
a
IF = 700 mA
300 mA
10 mA
R
f = 1 MHz
= 25°C
T
a
)
1.6
1.4
)
1.2
V
(
F
1.0
0.8
0.6
0.4
Forward voltage V
0.2
0
)
−40 0 40 80 120 160 200
Ambient temperature Ta (°C
400
)
pF
300
(
t
200
100
10
)
mA
(
R
1
0.1
Reverse current I
0.01
0.001
0 20406080100120
IR V
R
Ta = 125°C
Reverse voltage VR (V
75°C
25°C
)
Reverse current I
0.01
0.001
−40 0 40 80 120 160 200
Ambient temperature Ta (°C
100
Terminal capacitance C
0
0 20406080100120
)
Reverse voltage VR (V
)
2