Panasonic MA2Q737 Datasheet
Schottky Barrier Diodes (SBD)
MA2Q737
Silicon epitaxial planar type
For high-frequency rectification
■ Features
•
Forward current (average) I
•
Reverse voltage (DC value) V
•
Allowing automatic insertion with the emboss taping
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage (DC) V
Repetitive peak reverse voltage
1
Average forward current
Non-repetitive peak forward I
2
surge current
*
Junction temperature T
Storage temperature T
Note) *1: With a printed-circuit board (copper foil area 2.5 mm × 2.5 mm
+ 0.8 mm × 20 mm or more on both cathode and anode sides)
*2: The peak-to-peak value in one cycle of 50 Hz sine-wave
(non-repetitive)
*
: 1.5 A type
F(AV)
: 30 V
R
V
I
F(AV)
R
RRM
FSM
−40 to +125 °C
j
−40 to +125 °C
stg
30 V
30 V
1.5 A
60 A
4.4 ± 0.3 0 to 0.05
2.5 ± 0.3
21
+ 0.1
− 0.05
0.25
+ 0.4
5.0
− 0.1
New Mini-Power Type Package (2-pin)
Marking Symbol: PC
Unit : mm
1.4 ± 0.2
2.15 ± 0.3
1.2 ± 0.41.2 ± 0.4
1 : Anode
2 : Cathode
■ Electrical Characteristics Ta = 25°C
Parameter Symbol Conditions Min Typ Max Unit
Reverse current (DC) I
R
Forward voltage (DC) V
Terminal capacitance C
Reverse recovery time
*
t
rr
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment.
2. Rated input/output frequency: 20 MHz
3. * : trr measuring instrument
Bias Application Unit N-50BU
A
Pulse Generator
(PG-10N)
= 50 Ω
R
s
W.F.Analyzer
(SAS-8130)
= 50 Ω
R
i
VR = 30 V 1 mA
IF = 2 A 0.5 V
F
VR = 10 V, f = 1 MHz 70 pF
t
IF = IR = 100 mA 50 ns
Irr = 10 mA, RL = 100 Ω
Input Pulse Output Pulse
t
t
p
r
10%
90%
V
R
t
p
t
= 0.35 ns
r
δ = 0.05
= 2 µs
t
I
F
= 100 mA
I
F
I
= 100 mA
R
= 100 Ω
R
L
t
rr
I
= 10 mA
rr
t
1
MA2Q737
I
T
(1) Printed-circuit board: Glass epoxy board
(2) Printed-circuit board: Alumina board
)
A
(
2.0
F(AV)
1.5
1.0
F(AV)
Copper foil for both A and K sides
2.5 mm × 2.5 mm + 0.8 mm × 20 mm
AK
0.8
(2)
(1)
20 2.5
Schottky Barrier Diodes (SBD)
a
IF V
4
10
2.5
)
mA
(
F
3
10
TC = 125°C
2
10
10
F
75°C 25°C
− 20°C
5
10
4
10
)
µA
(
R
3
10
2
10
IR V
Ta = 125°C
75°C
R
0.5
Average forward current I
0
0 50 150100
Ambient temperature Ta (°C
VF T
0.8
0.7
)
0.6
V
(
F
0.5
0.4
0.3
0.2
Forward voltage V
0.1
0
−40 0 40 80 120 160 200
a
Ambient temperature Ta (°C
IF = 2 A
100 mA
10 mA
Forward current I
1
−1
10
)
)
0 0.1 0.2 0.3 0.4 0.5 0.6
Forward voltage VF (V
4
10
3
10
)
µA
(
R
2
10
10
Reverse current I
1
−1
10
−40 0 40 80 120 160 200
IR T
Ambient temperature Ta (°C
a
)
VR = 30 V
10 V
5 V
)
Reverse current I
10
1
0 102030405060
25°C
Reverse voltage VR (V
Ct V
600
500
)
pF
(
t
400
300
200
Terminal capacitance C
100
0
0 102030405060
R
Reverse voltage VR (V
)
)
2
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