Panasonic MA2Q736 Datasheet
Schottky Barrier Diodes (SBD)
MA2Q736
Silicon epitaxial planar type
For switching circuits
Unit : mm
4.4 ± 0.3 0 to 0.05
■ Features
•
Forward current (average) I
•
Reverse voltage (DC value) V
•
Allowing automatic insertion with the emboss taping
F(AV)
R
: 1 A type
: 40 V
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage (DC) V
Repetitive peak reverse voltage
1
Average forward current
*
Non-repetitive peak forward I
2
surge current
*
Junction temperature T
Storage temperature T
V
I
F(AV)
R
RRM
FSM
j
stg
Note) *1: With a printed-circuit board (copper foil area 2 mm × 2 mm or
more on both cathode and anode sides)
*2 : The peak-to-peak value in one cycle of 50 Hz sine-wave
(non-repetitive)
40 V
40 V
1A
30 A
−40 to +125 °C
−40 to +125 °C
2.5 ± 0.3
21
− 0.05
+ 0.1
0.25
+ 0.4
5.0
− 0.1
New Mini-Power Type Package (2-pin)
Marking Symbol: PB
1.4 ± 0.2
2.15 ± 0.3
1.2 ± 0.41.2 ± 0.4
1 : Anode
2 : Cathode
■ Electrical Characteristics Ta = 25°C
Parameter Symbol Conditions Min Typ Max Unit
Reverse current (DC) I
R
Forward voltage (DC) V
Terminal capacitance C
Reverse recovery time
*
t
rr
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment
2. Rated input/output frequency: 20 MHz
3. * : trr measuring instrument
VR = 40 V 2 mA
IF = 1 A 0.55 V
F
VR = 10 V, f = 1 MHz 50 pF
t
IF = IR = 100 mA 30 ns
Irr = 10 mA, RL = 100 Ω
Pulse Generator
(PG-10N)
R
= 50 Ω
s
Bias Application Unit N-50BU
A
W.F.Analyzer
(SAS-8130)
R
= 50 Ω
i
Input Pulse Output Pulse
t
t
p
r
10%
90%
V
R
t
p
= 0.35 ns
t
r
δ = 0.05
t
= 2 µs
I
F
= 100 mA
I
F
= 100 mA
I
R
= 100 Ω
R
L
t
rr
I
= 10 mA
rr
t
1
MA2Q736
I
1.6
)
1.4
A
(
1.2
F(AV)
1.0
0.8
0.6
0.4
Average forward current I
0.2
0
0 40 120 16080
F(AV)
Printed-circuit board
Anode side copper foil 2 mm × 2 mm
Cathode side copper foil 2 mm × 2 mm
Copper foil
Ambient temperature Ta (°C
T
Schottky Barrier Diodes (SBD)
a
A
2
K
2
4
10
3
10
)
mA
(
F
2
10
10
Forward current I
1
−1
10
0 0.1 0.2 0.3 0.4 0.5 0.6
)
IF V
F
Ta = 125°C
Forward voltage VF (V
75°C 25°C
− 20°C
4
10
3
10
)
µA
(
R
2
10
10
Reverse current I
1
−1
10
0 102030405060
)
IR V
R
Ta = 125°C
75°C
25°C
Reverse voltage VR (V
)
VF T
0.8
0.7
)
0.6
V
(
F
0.5
0.4
0.3
0.2
Forward voltage V
0.1
0
−40 0 40 80 120 160 200
a
Ambient temperature Ta (°C
IF = 1 A
100 mA
10 mA
IR T
4
10
3
10
)
µA
(
R
2
10
10
Reverse current I
1
−1
10
)
−40 0 40 80 120 160 200
Ambient temperature Ta (°C
a
VR = 40 V
10 V
5 V
600
500
)
pF
(
t
400
300
200
Terminal capacitance C
100
0
0 102030405060
)
Ct V
R
Reverse voltage VR (V
)
2
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