Panasonic MA2Q735 Datasheet

Schottky Barrier Diodes (SBD)

MA2Q735

Silicon epitaxial planar type

For switching circuits

■ Features

•

Forward current (average) I

•

Reverse voltage (DC value) V

•

Allowing automatic insertion with the emboss taping

F(AV)

R

: 1 A type

: 30 V

4.4 ± 0.3 0 to 0.05

2.5 ± 0.3

21

Unit : mm

1.4 ± 0.2

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Reverse voltage (DC) V

Repetitive peak reverse voltage

1

Average forward current

*

Non-repetitive peak forward I

2

surge current

*

Junction temperature T

Storage temperature T

V

I

F(AV)

R

RRM

FSM

−40 to +125 °C

j

−40 to +125 °C

stg

30 V

30 V

1A

30 A

− 0.05

+ 0.1

0.25

+ 0.4

5.0

− 0.1

New Mini Power Type Package (2-pin)

Marking Symbol: PA

2.15 ± 0.3

1.2 ± 0.41.2 ± 0.4

1 : Anode
2 : Cathode

Note) *1: With a printed-circuit board (copper foil area 2 mm × 2 mm or

more on both cathode and anode sides)

*2 : The peak-to-peak value in one cycle of 50 Hz sine-wave

(non-repetitive)

■ Electrical Characteristics Ta = 25°C

Parameter Symbol Conditions Min Typ Max Unit

Reverse current (DC) I

R

Forward voltage (DC) V

Terminal capacitance C

Reverse recovery time

*

t

rr

Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a

human body and the leakage of current from the operating equipment

  2. Rated input/output frequency: 20 MHz

3. * : trr measuring instrument

VR = 30 V 1 mA

IF = 1 A 0.5 V

F

VR = 10 V, f = 1 MHz 50 pF

t

IF = IR = 100 mA 30 ns

Irr = 10 mA, RL = 100 Ω

Bias Application Unit N-50BU

Pulse Generator
(PG-10N)

= 50 Ω

R

s

A

W.F.Analyzer
(SAS-8130)

= 50 Ω

R

i

Input Pulse Output Pulse

t

t

p

r

10%

90%

V

R

t

p

t

r

δ = 0.05

= 2 µs
= 0.35 ns

t

I

F

= 100 mA

I

F

= 100 mA

I

R

= 100 Ω

R

L

t

rr

I

= 10 mA

rr

t

1

MA2Q735

I

1.6

)

1.4

A
(

1.2

F(AV)

1.0

0.8

0.6

0.4

Average forward current I

0.2

0

0 40 120 16080

F(AV)

Printed-circuit board
Anode side copper foil 2 mm × 2 mm
Cathode side copper foil 2 mm × 2 mm

Copper foil

Ambient temperature Ta

 T

Schottky Barrier Diodes (SBD)

a

A

2

K

2

4

10

3

10

)

mA
(

F

2

10

10

Forward current I

1

−1

10

0 0.1 0.2 0.3 0.4 0.5 0.6

(°C)

IF  V

F

75°C 25°C

Ta = 125°C

Forward voltage VF (V

− 20°C

4

10

3

10

)
µA

(

R

2

10

10

Reverse current I

1

−1

10

0 102030405060

)

IR  V

R

Ta = 125°C

75°C

25°C

Reverse voltage VR (V

)

VF  T

0.8

0.7

)

0.6

V

(

F

0.5

0.4

0.3

0.2

Forward voltage V

0.1

0

−40 0 40 80 120 160 200

a

Ambient temperature Ta (°C

IF = 1 A

100 mA

10 mA

IR  T

4

10

3

10

)
µA

(

R

2

10

10

Reverse current I

1

−1

10

−40 0 40 80 120 160 200

)

Ambient temperature Ta (°C

a

VR = 30 V

10 V
5 V

600

500

)
pF

(

t

400

300

200

Terminal capacitance C

100

0

0 102030405060

)

Ct  V

R

Reverse voltage VR (V

)

2