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Schottky Barrier Diodes (SBD)
MA2Q705
Silicon epitaxial planar type
For high-frequency rectification
■ Features
•
New Mini-power type package (2-pin)
•
Allowing to rectify under (I
•
Low V
(forward voltage) type: VF < 0.37 V (at IF = 1.0 A)
F
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage (DC) V
Repetitive peak reverse voltage
Average forward current I
Non-repetitive peak forward I
surge current
Junction temperature T
Storage temperature T
Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave
*
(non-repetitive)
= 1.5 A) condition
F(AV)
R
V
RRM
F(AV)
FSM
j
stg
30 V
30 V
1.5 A
30 A
−40 to +125 °C
−40 to +125 °C
4.4 ± 0.3 0 to 0.05
2.5 ± 0.3
21
− 0.05
+ 0.1
0.25
+ 0.4
5.0
− 0.1
New Mini Power Type Package (2-pin)
Marking Symbol: PK
Unit : mm
1.4 ± 0.2
2.15 ± 0.3
1.2 ± 0.41.2 ± 0.4
1 : Anode
2 : Cathode
■ Electrical Characteristics Ta = 25°C
Parameter Symbol Conditions Min Typ Max Unit
Reverse current (DC) I
R
Forward voltage (DC) V
Terminal capacitance C
1,2
Reverse recovery time
*
t
rr
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment.
2. Rated input/output frequency: 20 MHz
3. *1: Obtained by fixing the element to the printed-circuit board (glass epoxy)
*2:trr measuring circuit
Bias Application Unit N-50BU
A
Pulse Generator
(PG-10N)
= 50 Ω
R
s
VR = 30 V 3 mA
IF = 1.0 A 0.37 V
F
VR = 10 V, f = 1 MHz 90 pF
t
IF = IR = 100 mA 50 ns
Irr = 0.1 · IR, RL = 100 Ω
Input Pulse Output Pulse
t
t
p
W.F.Analyzer
(SAS-8130)
= 50 Ω
R
i
r
10%
90%
V
R
t
p
= 0.35 ns
t
r
δ = 0.05
= 2 µs
t
I
F
= 100 mA
I
F
= 100 mA
I
R
= 100 Ω
R
L
t
rr
I
= 10 mA
rr
t
1
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MA2Q705
)
A
(
2.0
F(AV)
1.5
I
T
F(AV)
0.8
a
AK
2.5
20 2.5
Cu foil
Schottky Barrier Diodes (SBD)
IF V
10
Ta = 125°C
1
)
A
(
F
−1
10
F
− 20°C
75°C
25°C
1
−1
10
)
A
(
R
−2
10
IR V
Ta = 125°C
R
1.0
0.5
Average forward current I
0
0 50 150100
Ambient temperature Ta (°C
Ct V
600
500
)
pF
(
t
400
300
200
Terminal capacitance C
100
0
0 102030405060
R
Reverse voltage VR (V
−2
10
Forward current I
−3
10
−4
10
)
0 0.1 0.2 0.3 0.4 0.5 0.6
Forward voltage VF (V
)
−3
10
Reverse current I
−4
10
−5
10
0 102030405060
75°C
25°C
Reverse voltage VR (V
)
)
2