Panasonic MA2P701A, MA2P701 Datasheet
Schottky Barrier Diodes (SBD)
MA2P701, MA2P701A
Silicon epitaxial planar type
For high-frequency rectification
■ Features
•
Low forward rise voltage V
tion
•
Optimum for high-frequency rectification because of its short
reverse recovery time (t
•
Allowing large-current rectification in spite of its small-size
because of its low thermal resistance (R
, optimum for low-voltage rectifica-
F
)
rr
)
th(j-a)
Unit : mm
4.0 ± 0.5
3.0 ± 0.2
0.5 ± 0.10.3 ± 0.1
4.0 ± 0.2
1.5 ± 0.1
2
5.0 ± 0.5
0.7 ± 0.1
1
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage
(DC)
Repetitive peak
reverse voltage
MA2P701
MA2P701A
MA2P701
MA2P701A
Peak forward current I
1
Average forward current
*
Non-repetitive peak forward I
surge current
*2
Junction temperature T
Storage temperature T
V
I
F(AV)
V
RRM
FM
FSM
R
j
−55 to +125 °C
stg
125 °C
20 V
40
20 V
40
2A
1A
6A
Marking Symbol
• MA2P701 : 701
• MA2P701A : 701A
1.5 ± 0.2
0.4 ± 0.2
0 to 0.14
1 : Anode
2 : Cathode
Mini Type Power Package (2pin)
Note) *1: With a printed-circuit board (copper foil area cathode side)
2 mm × 10 mm or more (copper foil area anode side)
1 mm × 10 mm or more. Board thickness t = 1.6 mm
*2: The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive)
■ Electrical Characteristics Ta = 25°C
Parameter Symbol Conditions Min Typ Max Unit
Reverse current (DC)
Forward voltage (DC) V
Terminal capacitance C
Reverse recovery time
High voltage rectification
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment
2. Rated input/output frequency: 150 MHz
3. *1: With a printed-circuit board (copper foil area cathode side)
2 mm × 10 mm or more (copper foil area anode side)
1 mm × 10 mm or more. Board thickness t = 1.6 mm
*2:trr measuring instrument
MA2P701
MA2P701A
2
*
1
*
R
I
R
F
t
t
rr
th(j-a)
VR = 20 V 1 mA
VR = 40 V 2
IF = 1.0 A 0.55 V
VR = 0 V, f = 1 MHz 210 pF
IF = IR = 100 mA 14 ns
Irr = 10 mA, RL = 100 Ω
0.15 °C/mW
10 mm
K
2 mm
10 mm
A
1 mm
1
MA2P701, MA2P701A
Schottky Barrier Diodes (SBD)
Bias Application Unit N-50BU
A
Pulse Generator
(PG-10N)
R
= 50 Ω
s
Input Pulse Output Pulse
t
t
p
r
10%
90%
V
R
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
t
W.F.Analyzer
(SAS-8130)
R
= 50 Ω
i
I
F
I
= 100 mA
F
= 100 mA
I
R
R
= 100 Ω
L
t
rr
I
= 10 mA
rr
t
trr measuring instrument
Characteristics charts of MA2P701
V
10
1
)
mA
(
R
−1
10
−2
10
Reverse current I
−3
10
R
Ta = 125°C
75°C
25°C
Common characteristics charts
IF V
25°C
Ct V
− 20°C
75°C
F
R IR
)
f = 1 MHz
= 25°C
T
a
4
10
Ta = 125°C
3
10
)
mA
(
F
2
10
10
Forward current I
1
−1
10
0 0.2 0.4 0.6 0.8 1.0
Forward voltage VF (V
300
)
pF
(
t
200
100
Terminal capacitance C
VF T
0.8
0.7
)
0.6
V
(
F
0.5
0.4
0.3
0.2
Forward voltage V
0.1
0
−40 0 40 80 120 160
a
Ambient temperature Ta ( C
IR T
10
)
1
mA
(
R
−1
10
−2
10
Reverse current I
a
IF = 1 A
50 mA
)
VR = 20 V
10 V
−4
10
0 5 10 15 20 25 30
Reverse voltage VR (V
)
Characteristics charts of MA2P701A
V
10
1
)
mA
(
R
−1
10
−2
10
Reverse current I
−3
10
−4
10
0 102030405060
Reverse voltage VR (V
R
Ta = 125°C
75°C
25°C
)
2
0
0 5 10 15 20 25 30
Reverse voltage VR (V
Ct V
300
)
pF
(
t
200
100
R IR
Terminal capacitance C
0
0 5 10 15 20 25 30
Reverse voltage VR (V
)
f = 1 MHz
= 25°C
T
a
)
−3
10
−40 0 40 80 120 160
Ambient temperature Ta (°C
IR T
10
)
1
mA
(
R
−1
10
−2
10
Reverse current I
−3
10
−40 0 40 80 120 160 200
a
VR = 40 V
20 V
Ambient temperature Ta (°C
)
)
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