Panasonic MA2JP02 User Manual
PIN diodes
This product complies with the RoHS Directive (EU 2002/95/EC).
MA2JP02
Silicon epitaxial planar type
For high frequency switch
■ Features
• Small terminal capacitance C
• Small forward dynamic resistance r
• Miniature package and surface mounting type
t
f
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage V
Forward current I
Power dissipation P
Junction temperature T
Storage temperature T
R
F
D
j
−55 to +150 °C
stg
100 mA
150 mW
150 °C
60 V
1.25
±0.1
0.35
±0.1
1
0 to 0.1
2
±0.1
0.5
5˚
0 to 0.1
EIAJ: SC-76 SMini2-F1 Package
5˚
0.16
0.7
+0.1
–0.06
±0.1
1: Anode
2: Cathode
Unit: mm
±0.1
1.7
±0.1
0.4
(0.15)
Marking Symbol: 3F
±0.2
2.5
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
Reverse current I
R
Terminal capacitance C
Forward dynamic resistance r
f
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
Publication date: March 2004 SKL00009BED
IF = 10 mA 1.0 V
F
VR = 60 V 100 nA
VR = 1 V, f = 1 MHz 0.5 pF
t
IF = 10 mA, f = 100 MHz 2.0 Ω
1
MA2JP02
This product complies with the RoHS Directive (EU 2002/95/EC).
IF V
100°C
rf I
F
F
3
10
2
10
)
mA
(
F
10
Ta = 150°C
1
Forward current I
−1
10
−2
10
0 0.2 0.4 0.6 0.8 1.0 1.2
Forward voltage VF (V
3
10
)
Ω
(
f
2
10
10
−20°C
25°C
)
f = 100 MHz
= 25°C
T
a
3
10
2
10
100°C
)
10
nA
(
R
1
−1
10
−2
10
Reverse current I
−3
10
−4
10
25°C
020 6040
Reverse voltage VR
IR V
R
Ta = 150°C
(V)
1.0
Ct V
)
0.8
pF
(
t
0.6
0.4
Terminal capacitance C
0.2
0
0
10 20 30
Reverse voltage VR (V
R
f = 1 MHz
= 25°C
T
a
)
1
Forward dynamic resistance r
−1
10
−2
10
−1
10
Forward current IF (mA
110
)
2
SKL00009BED
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