Panasonic MA2J732 Datasheet
Schottky Barrier Diodes (SBD)
MA2J732
Silicon epitaxial planar type
For switching circuits
For wave detection circuit
Unit : mm
KA
■ Features
• Optimum for low-voltage rectification because of its low forward
rise voltage (V
) (Low VF type of MA3X704A)
F
• Optimum for high-frequency rectification because of its short re-
verse recovery time (t
)
rr
■ Absolute Maximum Ratings Ta = 25°C
+ 0.1
0.1
±
0.5
− 0.06
0.16
0.4 ± 0.1
2
1.7 ± 0.1
2.5 ± 0.2
1
0.4 ± 0.1
0.625
0.1
±
0.3
1.25
Parameter Symbol Rating Unit
Reverse voltage (DC) V
Peak reverse voltage V
Peak forward current I
Forward current (DC) I
Junction temperature T
Storage temperature T
R
RM
FM
F
j
stg
30 V
30 V
150 mA
30 mA
125 °C
−55 to +125 °C
1 : Anode
2 : Cathode
S-Mini Type Package (2-pin)
Marking Symbol: 2C
Internal Connection
21
■ Electrical Characteristics Ta = 25°C
Parameter Symbol Conditions Min Typ Max Unit
Reverse current (DC) I
Forward voltage (DC) V
R
F1
V
F2
Terminal capacitance C
Reverse recovery time
*
t
rr
Detection efficiency η Vin = 3 V
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment
2. Rated input/output frequency: 2 000 MHz
3. * : trr measuring instrument
Pulse Generator
(PG-10N)
R
Bias Application Unit N-50BU
= 50 Ω
s
VR = 30 V 30 µA
IF = 1 mA 0.3 V
IF = 30 mA 1.0 V
VR = 1 V, f = 1 MHz 1.5 pF
t
IF = IR = 10 mA 1.0 ns
Irr = 1 mA, RL = 100 Ω
, f = 30 MHz 65 %
(peak)
RL = 3.9 kΩ, CL = 10 pF
Input Pulse Output Pulse
t
t
p
A
W.F.Analyzer
(SAS-8130)
= 50 Ω
R
i
r
10%
90%
V
R
t
p
= 0.35 ns
t
r
δ = 0.05
= 2 µs
t
I
F
= 10 mA
I
F
= 10 mA
I
R
= 100 Ω
R
L
t
rr
I
= 1 mA
rr
t
0.1
±
0.7
1
MA2J732
Schottky Barrier Diodes (SBD)
IF V
3
10
2
10
)
Ta = 125°C
A
(
F
10
1
Forward current I
−1
10
−2
10
0 0.4 0.8 1.2 1.6 2.0 2.4
F
75°C 25°C
− 20°C
Forward voltage VF (V
Ct V
3.2
2.8
)
pF
2.4
(
t
2.0
1.6
1.2
R
)
f = 1 MHz
= 25°C
T
a
VF T
1.0
0.8
)
V
(
F
0.6
0.4
Forward voltage V
0.2
0
−40 0 40 80 120 160
a
IF = 30 mA
Ambient temperature Ta (°C
IR T
4
10
3
10
)
µA
(
R
2
10
10
a
VR = 30 V
3 V
1 V
10 mA
1 mA
IR V
4
10
3
10
)
µA
(
R
2
10
10
Reverse current I
1
−1
10
0 5 10 15 20 25 30
)
Reverse voltage VR (V
R
Ta = 125°C
75°C
25°C
)
0.8
Terminal capacitance C
0.4
0
0 5 10 15 20 25 30
Reverse voltage VR (V
Reverse current I
1
−1
10
)
–40 0 40 80 120 160 200
Ambient temperature Ta (°C
)
2
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