Panasonic MA2J729 Datasheet
Schottky Barrier Diodes (SBD)
MA2J729
Silicon epitaxial planar type
For super-high speed switching circuit
For small current rectification
Unit : mm
KA
■ Features
•
Sealed in the S-mini (2-pin) mold and super small type
•
Allowing to rectify under (I
•
Allowing high-density mounting
= 200 mA) condition
F(AV)
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage (DC) V
Repetitive peak reverse voltage
V
Peak forward current I
Average forward current I
Non-repetitive peak forward I
surge current
*
Junction temperature T
Storage temperature T
R
RRM
FM
F(AV)
FSM
j
stg
30 V
30 V
300 mA
200 mA
1A
150 °C
−55 to +150 °C
0.1
±
0.5
2
− 0.06
+ 0.1
0.16
0.4 ± 0.1
1.7 ± 0.1
2.5 ± 0.2
S-Mini Type Package (2-pin)
Marking Symbol: 2B
1
0.4 ± 0.1
0.625
0.1
±
0.3
1.25
1 : Anode
2 : Cathode
0.1
±
0.7
Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave
(non-repetitive)
■ Electrical Characteristics Ta = 25°C
Parameter Symbol Conditions Min Typ Max Unit
Reverse current (DC) I
R
Forward voltage (DC) V
Terminal capacitance C
Reverse recovery time
*
t
rr
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment
2. Rated input/output frequency: 1 000 MHz
3. * : trr measuring instrument
VR = 30 V 50 µA
IF = 200 mA 0.55 V
F
VR = 0 V, f = 1 MHz 30 pF
t
IF = IR = 100 mA 3.0 ns
Irr = 10 mA, RL = 100 Ω
Bias Application Unit N-50BU
Pulse Generator
(PG-10N)
= 50 Ω
R
s
A
W.F.Analyzer
(SAS-8130)
= 50 Ω
R
i
Input Pulse Output Pulse
t
t
p
r
10%
90%
V
R
t
p
= 0.35 ns
t
r
δ = 0.05
t
= 2 µs
I
F
= 100 mA
I
F
= 100 mA
I
R
= 100 Ω
R
L
t
rr
I
= 10 mA
rr
t
1
MA2J729
Schottky Barrier Diodes (SBD)
IF V
3
10
2
10
Ta = 150°C
)
mA
(
F
10
1
Forward current I
−1
10
−2
10
0 0.1 0.2 0.3 0.4 0.5 0.6
F
100°C 25°C
Forward voltage VF (V
Ct V
40
35
)
pF
30
(
t
25
20
15
R
− 20°C
)
f = 1 MHz
= 25°C
T
a
VF T
0.5
0.4
)
V
(
F
0.3
0.2
Forward voltage V
0.1
0
−40 0 40 80 120 160 200
a
IF = 200 mA
Ambient temperature Ta (°C
IR T
5
10
4
10
)
µA
(
R
3
10
VR = 30 V
2
10
a
100 mA
10 mA
15 V
5 V
IR V
5
10
4
10
)
µA
(
R
3
10
2
10
Reverse current I
10
1
0 5 10 15 20 25 30
)
Reverse voltage VR (V
R
Ta = 150°C
100°C
25°C
)
10
Terminal capacitance C
5
0
0 5 10 15 20 25 30
Reverse voltage VR (V
Reverse current I
10
1
)
−40 0 40 80 120 160 200
Ambient temperature Ta (°C
)
2
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