Panasonic MA2J7270G User Manual
This product complies with the RoHS Directive (EU 2002/95/EC).
Schottky Barrier Diodes (SBD)
MA2J7270G
Silicon epitaxial planar type
For super high speed switching
For small current rectification
■ Features
• VR = 50 V is guaranteed
• I
= 200 mA rectification is possible
F(AV)
■ Package
•
Code
SMini2-F3
•
Pin Name
1: Anode
2: Cathode
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage V
Repetitive peak reverse voltage V
Forward current (Average) I
Peak forward current I
Non-repetitive peak forward I
surge current
*
Junction temperature T
Storage temperature T
R
RRM
F(AV)
FM
FSM
j
stg
50 V
50 V
200 mA
300 mA
1A
150 °C
−55 to +150 °C
Note)*: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
■ Marking Symbol: 2F
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
Reverse current I
F1
V
F2
R
Terminal capacitance C
Reverse recovery time
*
t
rr
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 1 GHz. 4.
Bias Application Unit N-50BU
A
Pulse Generator
(PG-10N)
= 50 Ω
R
s
Wave Form Analyzer
(SAS-8130)
= 50 Ω
R
i
IF = 30 mA 0.36 V
IF = 200 mA 0.55 V
VR = 50 V 200 µA
VR = 0 V, f = 1 MHz 30 pF
t
IF = IR = 100 mA 3.0 ns
Irr = 10 mA, RL = 100 Ω
: trr measurement circuit
*
Input Pulse Output Pulse
t
t
p
r
10%
V
R
t
t
δ = 0.05
90%
= 2 µs
p
= 0.35 ns
r
t
I
F
= 100 mA
I
F
= 100 mA
I
R
= 100 Ω
R
L
t
rr
I
= 10 mA
rr
t
Publication date: October 2007 SKH00170AED
1
MA2J7270G
3
10
2
10
= 150°C
T
a
)
mA
(
F
10
I
F
This product complies with the RoHS Directive (EU 2002/95/EC).
V
F
100°C
−20°C
5
10
4
10
)
µA
(
R
3
10
T
a
IR V
= 150°C
R
100°C
VF T
0.5
0.4
)
V
(
F
0.3
a
I
= 200 mA
F
100 mA
1
Forward current I
−1
10
−2
10
0 0.1 0.2 0.3 0.4 0.5 0.6
25°C
Forward voltage VF (V
IR T
= 30 V
a
5 V
5
10
4
10
)
µA
(
R
3
10
V
R
2
10
Reverse current I
10
1
−40 0 40 80 120 160 200
Ambient temperature Ta (°C
2
10
R
25°C
)
f = 1 MHz
= 25°C
T
a
Reverse current I
10
1
)
0 102030405060
Reverse voltage VR (V
Ct V
30
25
)
pF
(
t
20
15
10
Terminal capacitance C
5
0.2
Forward voltage V
0.1
0
−40 0 40 80 120 160 200
Ambient temperature Ta (°C
I
T
)
A
(m
F(AV)
300
250
200
150
100
F(AV)
°C
= 150
T
j
50
a
I
F
t
p
30 mA
)
T
Forward current (Average) I
0
)
0 102030405060
Reverse voltage VR (V
)
0
0DC40 16012080
Ambient temperature Ta (°C
)
2
SKH00170AED
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