Panasonic MA2J704 Datasheet
Schottky Barrier Diodes (SBD)
MA2J704
Silicon epitaxial planar type
For super-high speed switching circuit
Unit : mm
KA
■ Features
•
S-mini type 2-pin package
•
Allowing to rectify under (I
•
Low I
(reverse current) type. (About 1/10 of IR of the ordinary
R
= 200 mA) condition
F(AV)
products)
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage (DC) V
Repetitive peak reverse voltage
Peak forward current I
Average forward current I
Non-repetitive peak forward I
surge current
*
Junction temperature T
Storage temperature T
V
F(AV)
R
RRM
FM
FSM
j
stg
Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave
(non-repetitive)
20 V
20 V
300 mA
200 mA
1A
125 °C
−55 to +125 °C
0.1
±
0.5
2
+ 0.1
− 0.06
0.16
0.4 ± 0.1
1.7 ± 0.1
2.5 ± 0.2
S-Mini Type Package (2-pin)
Marking Symbol: 2S
Internal Connection
21
1
0.4 ± 0.1
0.625
0.1
±
0.3
1.25
1 : Anode
2 : Cathode
0.1
±
0.7
■ Electrical Characteristics Ta = 25°C
Parameter Symbol Conditions Min Typ Max Unit
Reverse current (DC) I
R1
I
R2
Forward voltage (DC) V
Terminal capacitance C
Reverse recovery time
*
t
rr
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment.
2. Rated input/output frequency: 1 000 MHz
3. * : trr measuring circuit
VR = 10 V 2 µA
VR = 20 V 5 µA
IF = 200 mA 0.55 V
F
VR = 0 V, f = 1 MHz 30 pF
t
IF = IR = 100 mA 3.0 ns
Irr = 0.1 · IR, RL = 100 Ω
Bias Application Unit N-50BU
Pulse Generator
(PG-10N)
= 50 Ω
R
s
A
W.F.Analyzer
(SAS-8130)
= 50 Ω
R
i
Input Pulse Output Pulse
t
t
p
r
10%
90%
V
R
t
p
t
= 0.35 ns
r
δ = 0.05
t
= 2 µs
I
F
= 100 mA
I
F
I
= 100 mA
R
= 100 Ω
R
L
t
rr
I
= 10 mA
rr
t
1
MA2J704
Schottky Barrier Diodes (SBD)
IF V
10
1
)
A
(
F
−1
10
−2
10
Forward current I
−3
10
−4
10
Ta = 125°C
0 0.1 0.2 0.3 0.4 0.5 0.6
F
Forward voltage VF (V
75°C
25°C
)
IR V
−2
10
−3
10
)
A
(
R
−4
10
−5
10
Reverse current I
−6
10
−7
10
0 5 10 15 20 25 30
R
Reverse voltage VR (V
Ta = 125°C
75°C
25°C
)
Ct V
40
)
pF
30
(
t
20
10
Terminal capacitance C
0
0 5 10 15 20 25 30
R
Reverse voltage VR (V
)
2
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