Panasonic MA2J116 Datasheet

Switching Diodes

MA2J116

Silicon epitaxial planar type

For general purpose

Unit : mm

KA

■ Features

•

Small S-mini type package, allowing high-density mounting

•

Soft recovery characteristic (t

= 100 ns)

rr

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Reverse voltage (DC) V

Peak reverse voltage V

Average forward current I

Peak forward current I

Non-repetitive peak forward I

surge current

*

Junction temperature T

Storage temperature T

R

RM

F(AV)

FM

FSM

j

stg

40 V

40 V

100 mA

225 mA

500 mA

150 °C

−55 to +150 °C

Noe) * : t = 1 s

■ Electrical Characteristics Ta = 25°C

Parameter Symbol Conditions Min Typ Max Unit

Reverse current (DC) I

R1

I

R2

I

R3

Forward voltage (DC) V

Reverse voltage (DC) V

Terminal capacitance C

1

Forward dynamic resistance

Reverse recovery time

*

2

*

r

f

t

rr

Note) 1. Rated input/output frequency: 100 MHz

2. *1: YHP 4191A PF IMPEDANCE ANALYZER

*2:trr measuring circuit

VR = 15 V 5 nA

VR = 40 V 10 nA

VR = 35 V, Ta = 100°C 100 µA

IF = 100 mA 1.2 V

F

IR = 100 µA35V

R

VR = 6 V, f = 1 MHz 1.0 2.0 pF

t

IF = 3 mA, f = 30 MHz 3.6 Ω

IF = 10 mA, VR = 6 V 100 ns

Irr = 0.1 · IR, RL = 100 Ω

0.1

±

0.5

2

− 0.06

+ 0.1

0.16

0.4 ± 0.1

1.7 ± 0.1

2.5 ± 0.2

S-Mini Type Package (2-pin)

Marking Symbol: 1H

1

0.4 ± 0.1

1 : Anode 2 : Cathode

0.625

0.3

0.1

±

1.25

0.1

±

0.7

Bias Application Unit N-50BU

Pulse Generator (PG-10N)

= 50 Ω

R

s

A

W.F.Analyzer (SAS-8130)

= 50 Ω

R

i

Input Pulse Output Pulse

t

t

p

r

10%

90%

V

R

= 2 µs

t

p

= 0.35 ns

t

r

δ = 0.05

t

I

F

= 10 mA

I

F

= 6 V

V

R

= 100 Ω

R

L

t

rr

I

= 0.1 · I

rr

t

R

1

MA2J116

Switching Diodes

IF  V

1 000

100

)

mA (

F

10

Forward current I

0.1

0.01

) nA

(

R

0.1

°C

Ta = 150

°C

100

°C

25

°C

− 20

1

0 0.2 0.4 0.6 0.8 1.0 1.2

Forward voltage VF (V

IR T

10

VR = 30 V

1

F

10

1

(nA)

R

0.1

0.01

Reverse current I

0.001 0 102030405060

)

a

3.2

15 V

6 V

2.8

) pF

2.4

(

t

2.0

1.6

IR  V

R

°C

Ta = 150

°C

100

°C

25

Reverse voltage VR (V

Ct  V

R

f = 1 MHz

= 25°C

T

a

1.6

1.4

)

1.2

V

(

F

1.0

0.8

0.6

0.4

Forward voltage V

0.2

0

−40 0 40 80 120 160 200

)

VF  T

a

IF = 100 mA

10 mA

3 mA

Ambient temperature Ta (°C

)

0.01

Reverse current I

0.001

−40 0 40 80 120 160 200

Ambient temperature Ta (°C

1.2

0.8

Terminal capacitance C

0.4

0

10 155 2025303540

)

0

Reverse voltage VR (V

)

2

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