Panasonic MA2J114 Datasheet
Rectifier Diodes
MA2J114
Silicon epitaxial planar type
For small power rectification
Unit : mm
■ Features
•
Small S-mini type package, allowing high-density mounting
•
High reverse voltage V
R
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage (DC) V
Peak reverse voltage V
Output current I
Repetitive peak forward I
R
RM
O
FRM
150 V
150 V
200 mA
600 mA
current
Non-repetitive peak forward I
surge current
*
Junction temperature T
Storage temperature T
FSM
j
stg
1A
150 °C
−55 to +150 °C
Note) * : t = l s
■ Electrical Characteristics Ta = 25°C
Parameter Symbol Conditions Min Typ Max Unit
Reverse current (DC) I
Forward voltage (DC) V
Terminal capacitance C
Note) Rated input/output frequency: 3 MHz
R
VR = 150 V 200 nA
IF = 200 mA 1.2 V
F
VR = 0 V, f = 1 MHz 4.5 pF
t
KA
0.1
±
0.5
2
− 0.06
+ 0.1
0.16
0.4 ± 0.1
1.7 ± 0.1
2.5 ± 0.2
S-Mini Type Package (2-pin)
Marking Symbol: 1E
1
0.4 ± 0.1
0.625
0.1
±
0.3
1.25
1：Anode
2：Cathode
0.1
±
0.7
1
MA2J114
Rectifier Diodes
IF V
1 000
100
)
mA
(
F
10
1
Forward current I
0.1
0.01
Ta = 150°C
0 0.2 0.4 0.6 0.8 1.0 1.2
F
100°C 25°C
Forward voltage VF (V
IR T
100
10
)
nA
(
R
1
0.1
Reverse current I
0.01
0.001
−40 0 40 80 120 160 200
a
VR = 150 V
Ambient temperature Ta (°C
−20°C
)
100 V
10 V
VF T
Ct V
a
IF = 200 mA
R
f = 1 MHz
T
10 mA
3 mA
= 25°C
a
)
1.6
1.4
)
1.2
V
(
F
1.0
0.8
0.6
0.4
Forward voltage V
0.2
0
−40 0 40 80 120 160 200
Ambient temperature Ta (°C
3
)
pF
(
t
2
1
Terminal capacitance C
0
0 40 80 120 160 200 240
)
Reverse voltage VR (V
)
100
10
)
nA
(
R
1
0.1
Reverse current I
0.01
0.001
0 40 80 120 160 200 240
1 000
300
)
A
(
100
F(surge)
30
10
3
1
Forward surge current I
0.3
0.1
0.1
IR V
R
Ta = 150°C
100°C
25°C
Reverse voltage VR (V
I
t
F(surge)
This graph shows actual values,
not guaranteed values.
0.3 3 30 100101
W
Ta = 25°C
t
W
Non repetitive
Pulse width tW (ms
I
F(surge)
)
)
2
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