Panasonic MA2J1120G User Manual

This product complies with the RoHS Directive (EU 2002/95/EC).

Switching Diodes

MA2J1120G

Silicon epitaxial planar type

For switching circuits

■ Features

• Allowing high-density mounting

• Ensuring the forward current (Average) capacity I

F(AV)

= 200 mA

■ Package

•

Code
SMini2-F3

•

Pin Name

1: Anode
2: Cathode

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Reverse voltage V

Maximum peak reverse voltage V

1

Forward current (Average)

*

Peak forward current I

Non-repetitive peak forward I
surge current

2

*

Junction temperature T

Storage temperature T

Note)*1: With a printed-circuit board

2: t = 1 s

*

I

F(AV)

R

RM

FM

FSM

j

−55 to +150 °C

stg

200 mA

600 mA

150 °C

40 V

40 V

1A

■ Marking Symbol: 1C

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit

Forward voltage V

Reverse current I

F

R1

I

R2

I

R3

Terminal capacitance C

Reverse recovery time

*

t

rr

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.

2. Absolute frequency of input and output is 100 MHz.

3.*: trr measurement circuit

Bias Application Unit (N-50BU)

A

Pulse Generator
(PG-10N)

= 50 Ω

R

s

Wave Form Analyzer
(SAS-8130)

= 50 Ω

R

i

IF = 200 mA 1.1 V

VR = 15 V 50 nA

VR = 35 V 500

VR = 35 V, Ta = 100°C 100 µA

VR = 0 V, f = 1 MHz 4 pF

t

IF = 10 mA, VR = 6 V 10 ns
Irr = 0.1 IR , RL = 100 Ω

Input Pulse Output Pulse

t

t

p

r

10%

90%

V

R

= 2 µs

t

p

= 0.35 ns

t

r

δ = 0.05

t

I

F

= 10 mA

I

F

V

R

R

L

t

rr

I

rr

= 6 V
= 100 Ω

= 0.1 I

t

R

Publication date: October 2007 SKF00073AED

1

MA2J1120G

This product complies with the RoHS Directive (EU 2002/95/EC).

IF  V

3

10

2

10

)

= 150°C

T

a

mA
(

100°C

F

10

25°C

–20°C

1

Forward current I

−1

10

−2

10

0 0.2 0.4 0.6 0.8 1.0 1.2

F

Forward voltage VF (V

IR  T

2

10

10

(µA)

R

1

a

IR  V

Ct  V

R

R

= 150°C

T

a

100°C

25°C

f = 1 MHz

= 25°C

T

a

1.6

)

1.2

V

(

F

0.8

Forward voltage V

0.4

0

–40 0 40 80 120 160 200

)

3

10

)
A

(

2

10

F(surge)

10

2

10

10

)
µA

(

R

1

−1

10

Reverse current I

−2

10

−3

10

)

= 35 V

V

R

15 V
6 V

0 102030405060

Reverse voltage VR (V

1.6

)
pF

1.2

(

t

0.8

VF  T

a

= 200 mA

I

F

10 mA

3 mA

Ambient temperature Ta (°C

I

 t

F(surge)

W

= 25°C

T

a

I

F(surge

t

W

Non repetitive

)

)

−1

Reverse current I

10

−2

10

–40 0 40 80 120 160 200

Ambient temperature Ta (°C)

0.4

Terminal capacitance C

0

0 102030405060

Reverse voltage VR (V

1

Forward surge current I

−1

10

)

−1

Pulse width tW (ms)

10110

2

SKF00073AED