Panasonic MA2J112 Datasheet

Switching Diodes

MA2J112

Silicon epitaxial planar type

For switching circuits

Unit : mm

KA

■ Features

•

Small S-mini type package, allowing high-density mounting

•

Ensuring the average forward current capacity I

F(AV)

= 200 mA

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Reverse voltage (DC) V

Peak reverse voltage V

1

Average forward current

*

I

Peak forward current I

Non-repetitive peak forward I

2

surge current

*

Junction temperature T

Storage temperature T

R

RM

F(AV)

FM

FSM

j

stg

40 V

40 V

200 mA

600 mA

1A

150 °C

−55 to +150 °C

Note) *1: With a printed-circuit board

*2:t = 1 s

■ Electrical Characteristics Ta = 25°C

Parameter Symbol Conditions Min Typ Max Unit

Reverse current (DC) I

R1

I

R2

I

R3

Forward voltage (DC) V

Terminal capacitance C

Reverse recovery time

*

t

rr

Note) 1. Rated input/output frequency: 100 MHz

2. * : trr measuring circuit

Bias Application Unit N-50BU

A

Pulse Generator (PG-10N)

= 50 Ω

R

s

W.F.Analyzer (SAS-8130) R

VR = 15 V 50 nA

VR = 35 V 500 nA

VR = 35 V, Ta = 100°C 100 µA

IF = 200 mA 1.1 V

F

VR = 0 V, f = 1 MHz 4 pF

t

IF = 10 mA, VR = 6 V 10 ns

Irr = 0.1 · IR, RL = 100 Ω

= 50 Ω

i

0.1

±

0.5

2

− 0.06

+ 0.1

0.16

0.4 ± 0.1

Marking Symbol: 1C

Input Pulse Output Pulse

t

t

p

r

10%

90%

V

R

= 2 µs

t

p

= 0.35 ns

t

r

δ = 0.05

t

1.7 ± 0.1

2.5 ± 0.2

S-Mini Type Package (2-pin)

t

= 10 mA

I

F

= 6 V

V

R

= 100 Ω

R

L

rr

I

= 0.1 · I

rr

I

F

1

0.4 ± 0.1

1 : Anode 2 : Cathode

t

R

0.625

0.3

0.1

±

1.25

0.1

±

0.7

1

MA2J112

Switching Diodes

IF  V

1 000

100

)

Ta = 150°C

mA (

100°C

F

10

25°C

– 20°C

1

Forward current I

0.1

0.01 0 0.2 0.4 0.6 0.8 1.0 1.2

Forward voltage VF (V

IR  T

100

10

(µA)

R

1

0.1

Reverse current I

0.01 –40 0 40 80 120 160 200

Ambient temperature Ta (°C)

F

)

a

VR = 35 V

15 V 6 V

IR  V

R

100

Ta = 150°C

10

)

µA

(

R

1

0.1

Reverse current I

0.01

0.001 0 102030405060

100°C

25°C

Reverse voltage VR (V

Ct  V

R

1.6

1.4

)

pF

1.2

(

t

1.0

0.8

0.6

0.4

Terminal capacitance C

0.2

0

0 102030405060

f = 1 MHz T

Reverse voltage VR (V

= 25°C

a

VF  T

a

1.6

1.4

)

1.2

V

(

F

1.0

 t

IF = 200 mA

10 mA

3 mA

W

Ta = 25°C

I

F(surge

t

W

Non repetitive

)

)

0.8

0.6

0.4

Forward voltage V

0.2

0

)

)

–40 0 40 80 120 160 200

Ambient temperature Ta (°C

I

F(surge)

1 000

300

) A

(

100

F(surge)

30

10

3

1

Forward surge current I

0.3

0.1

0.03

0.3 3 301010.1

Pulse width tW (ms)

2

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