Panasonic MA2J111, MA111 User Manual
Switching Diodes
This product complies with the RoHS Directive (EU 2002/95/EC).
MA2J111 (MA111)
Silicon epitaxial planar type
For switching circuits
■ Features
• Allowing high-density mounting
• Short reverse recovery time t
• Small terminal capacitance C
rr
t
• High breakdown voltage: VR = 80 V
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage V
Maximum peak reverse voltage V
Forward current I
Peak forward current I
Non-repetitive peak forward I
surge current
*
Junction temperature T
Storage temperature T
Note)*:t = 1 s
R
RM
F
FM
FSM
j
−55 to +150 °C
stg
100 mA
225 mA
500 mA
150 °C
80 V
80 V
1.25
±0.1
0.35
±0.1
1
0 to 0.1
2
±0.1
0.5
5˚
0 to 0.1
1: Anode
2: Cathode
EIAJ: SC-76 SMini2-F1 Package
5˚
0.16
0.7
+0.1
–0.06
Unit: mm
±0.1
Marking Symbol: 1B
±0.1
1.7
±0.1
0.4
(0.15)
±0.2
2.5
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
Reverse voltage V
Reverse current I
F
R
R
Terminal capacitance C
Reverse recovery time
*
t
rr
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 100 MHz.
3.*: trr measurement circuit
Bias Application Unit (N-50BU)
A
Pulse Generator
(PG-10N)
= 50 Ω
R
s
Publication date: March 2004 SKF00011BED
Wave Form Analyzer
(SAS-8130)
R
= 50 Ω
i
IF = 100 mA 0.95 1.20 V
IR = 100 µA80V
VR = 75 V 100 nA
VR = 0 V, f = 1 MHz 0.6 1.2 pF
t
IF = 10 mA, VR = 6 V 3 ns
Irr = 0.1 IR , RL = 100 Ω
Input Pulse Output Pulse
t
t
p
r
10%
90%
V
R
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
t
I
F
I
= 10 mA
F
V
R
R
L
t
rr
I
rr
= 6 V
= 100 Ω
= 0.1 I
t
R
Note) The part number in the parenthesis shows conventional part number.
1
MA2J111
This product complies with the RoHS Directive (EU 2002/95/EC).
IF V
3
10
2
10
)
mA
(
F
10
1
Forward current I
−1
10
−2
10
0 0.2 0.4 0.6 0.8 1.0 1.2
F
Forward voltage VF (V
IR T
2
10
10
(µA)
R
1
a
T
a
V
R
= 150°C
100°C
25°C
−20°C
)
= 75 V
35 V
1 V
IR V
2
10
)
10
µA
(
R
1
−1
Reverse current I
10
−2
10
0 20406080100120
T
a
R
= 150°C
100°C
25°C
Reverse voltage VR (V
Ct V
0.8
)
pF
0.6
(
t
0.4
R
f = 1 MHz
T
a
)
= 25°C
VF T
1.6
)
1.2
V
(
F
0.8
Forward voltage V
0.4
0
−40 0 40 80 120 160 200
a
= 100 mA
I
F
Ambient temperature Ta
I
t
)
A
(
F(surge)
3
10
2
10
10
F(surge)
W
T
t
Non repetitive
10 mA
(°C)
= 25°C
a
I
W
3 mA
F(surge)
−1
Reverse current I
10
−2
10
−40 0 40 80 120 160 200
Ambient temperature Ta (°C
0.2
Terminal capacitance C
0
0 20 40 60 80 100 120
)
Reverse voltage VR (V
)
1
Forward surge current I
−1
10
−1
Pulse width tW (ms
10110
)
2
SKF00011BED
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